HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 498

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Flowchart for Erasing Multiple Blocks
466
Erase-verify
next block
Address + 1
Address
No
Select erase mode (E bit = 1 in FLMCR)
No
Figure 20.11 Multiple-Block Erase Flowchart
(set bits of block to be erased to 1)
Write 0 data to all addresses to be
Dummy write to verify address *
(flash memory latches address)
Clear EBR bit of erased block
Set top address of block as
Set erase block registers
Enable watchdog timer *
Select erase-verify mode
Disable watchdog timer
(EV bit = 1 in FLMCR)
(EBR1 = EBR2 = 0?)
(read data = H'FF?)
erased (prewrite) *
Yes
All blocks erased?
Yes
All erased blocks
Wait (t
Wait (t
verify address
OK
End of erase
Wait (x)ms *
Clear EV bit
Yes
Last address
Clear E bit
verified?
in block?
Verify *
Start
n = 1
vs
vs
2) s *
1) s *
4
5
6
6
1
2
3
No go
No
Erasing
ends
Double Erase time
All erased blocks
No
Yes
Erase error
Notes: *1 Program all addresses to be erased
(x
n
verified?
n
N? *
2 x)
4?
Yes
*2 Set the watchdog timer overflow
*3 For the erase-verify dummy write,
*4 Read the data to be verified with a
*5 The erase time x is successively
*6 t
6
by following the prewrite flowchart.
interval to the value indicated in table
20.10.
write H'FF with a byte transfer
instruction.
byte transfer instruction. When
erasing two or more blocks, clear the
bits of erased blocks in the erase
block register, so that only unerased
blocks will be erased again.
incremented by the initial set value
2
erasing, the erase time is fixed. An
initial value of 6.25 ms or less should
be set, and the time for one erasure
should be 50 ms or less.
t
N:
VS
VS
n–1
1: 4 s or more
2: 2 s or more
(n = 1, 2, 3, 4). After fourth
Erase-verify next block
602 (Set N so that total
erase time does not exceed
30s.)
Yes
No
No
n + 1
n