HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 463

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HD64F3437TFI16V

Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HD64F3437TFI16V

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3437TFI16V
Manufacturer:
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Quantity:
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Part Number:
HD64F3437TFI16V
Manufacturer:
Renesas Electronics America
Quantity:
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(6) Do not apply 12 V to the FV
To prevent accidental programming or erasing due to microcontroller program runaway etc., apply
12 V to the V
is emulated by RAM. Overprogramming or overerasing due to program runaway can cause
memory cells to malfunction. Avoid system configurations in which 12 V is always applied to the
FV
While 12 V is applied, the watchdog timer should be running and enabled to halt runaway
program execution, so that program runaway will not lead to overprogramming or overerasing.
Note: * In the LH version, V
Boot mode
User program
mode
PP
ø
V
V
V
RES
pin.
CC
PP
PP
Periods during which the V
cleared and flash memory must not be accessed
2.7 to 5.5 V *
V
CC
PP
V
V
+ 2 V to 11.4 V
CC
pin only when the flash memory is programmed or erased, or when flash memory
CC
V
12
t
V
OSC1
12
Figure 19.20 V
0.6 V
0.6 V
CC
= 3.0 V to 5.5 V.
PP
flag is being set or
PP
pin during normal operation.
0 s min
PP
Power-On and Power-Off Timing
Timing at which boot
program branches
to RAM area
0 s min
Min 10ø
(when RES is low)
0 s min
0 to V
0 to V
CC
CC
431
V
V

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