HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 625

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HD64F3437TFI16V

Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HD64F3437TFI16V

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
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Part Number:
HD64F3437TFI16V
Manufacturer:
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Part Number:
HD64F3437TFI16V
Manufacturer:
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23.4.5
Table 23.27 shows the flash memory characteristics.
Table 23.27 Flash Memory Characteristics
Conditions: V
Item
Programming time
Erase time
Reprogramming count
Programming Wait time after
Flash Memory Characteristics
*1, *3, *5
V
operation temperature), Ta = 0 to +85˚C
SWE-bit setting
Wait time after
PSU-bit setting
Wait time after
P-bit setting
Wait time after
P-bit clear
Wait time after
PSU-bit clear
Wait time after
PV-bit setting
Wait time after
dummy write
Wait time after
PV-bit clear
Maximum
programming
count
CC
SS
= AV
= 3.0 V to 3.6 V, V
*1, *2, *4
*1, *4, *5
SS
*1
= 0 V, AV
* 1
*1, *4
*1
*1
* 1
*1
*1
Symbol
tP
tE
N
x
y
z
N
ref
WEC
CC
= 3.0 to AV
B = 3.0 V to 3.6 V, AV
Min
10
50
150
10
10
4
2
4
CC
, T
a
Typ
10
100
= 0 to +75 C (programming/erasing
CC
= 3.0 V to 3.6 V,
Max
200
1200
100
500
403
Unit
ms/
32 bytes
ms/
block
Times
Times
s
s
s
s
s
s
s
s
Test
Condition
593

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