S9S12XS256J0CAL Freescale Semiconductor, S9S12XS256J0CAL Datasheet - Page 509

• Manufacturer Part Number: S9S12XS256J0CAL
• Description: MCU 256K FLASH 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of S9S12XS256J0CAL

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 91
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 8K x 8
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: S12XS
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: CAN, SCI, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 91
• Number Of Timers: 12
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: DEMO9S12XSFAME, EVB9S12XEP100
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 16 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

18.1.2
18.1.2.1
18.1.2.2
18.1.2.3
18.1.3
The block diagram of the Flash module is shown in
Freescale Semiconductor
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256 Kbytes of P-Flash memory composed of one 256 Kbyte Flash block divided into 256 sectors
of 1024 bytes
Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
8 Kbytes of D-Flash memory composed of one 8 Kbyte Flash block divided into 32 sectors of 256
bytes
Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of D-Flash memory
Ability to program up to four words in a burst sequence
No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
Features
Block Diagram
P-Flash Features
D-Flash Features
Other Flash Module Features
S12XS Family Reference Manual, Rev. 1.11
Figure
18-1.
256 KByte Flash Module (S12XFTMR256K1V1)
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