DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 240

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
(2)
If an external write occurs after an external read while bit IDLS0 in IDLCR is set to 1, idle cycles
specified by bits IDLCA1 and IDLCA0 when bit IDLSELn in IDLCR is cleared to 0 when
IDLSELn = 0, or bits IDLCB1 and IDLCB0 when IDLSELn is set to 1 are inserted at the start of
the write cycle (n = 0 to 7).
Figure 6.38 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle for ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a conflict occurs in bus cycle B between the read data from ROM
and the CPU write data. In (b), an idle cycle is inserted, and a data conflict is prevented.
Rev. 2.00 Jun. 28, 2007 Page 214 of 864
REJ09B0341-0200
Write after Read
Bφ
Address bus
CS (area A)
CS (area B)
RD
LLWR
Data bus
Figure 6.38 Example of Idle Cycle Operation (Write after Read)
(a) No idle cycle inserted
Bus cycle A
(IDLS0 = 0)
T
1
T
2
T
Data hold
time is long.
3
Bus cycle B
T
1
Data conflict
T
2
(IDLS0 = 1, IDLSELn = 0, IDLCA1 = 0, IDLCA0 = 0)
T
Bus cycle A
1
(b) Idle cycle inserted
T
2
T
3
T
Bus cycle B
i
T
1
T
2