DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 511

IC H8SX/1657 MCU FLASH 120TQFP

DF61657CN35FTV

Manufacturer Part Number
DF61657CN35FTV
Description
IC H8SX/1657 MCU FLASH 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of DF61657CN35FTV

Core Processor
H8SX
Core Size
32-Bit
Speed
35MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
82
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
3DK1657 - DEV EVAL KIT FOR H8SX/1657
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
DF61657CN35FTV
Manufacturer:
RENESAS
Quantity:
101
Part Number:
DF61657CN35FTV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
10.10.7 Conflict between Buffer Register Write and Compare Match
If a compare match occurs in the T2 state of a TGR write cycle, the data transferred to TGR by the
buffer operation will be the write data.
Figure 10.49 shows the timing in this case.
10.10.8 Conflict between TGR Read and Input Capture
If the input capture signal is generated in the T1 state of a TGR read cycle, the data that is read
will be the data after input capture transfer.
Figure 10.50 shows the timing in this case.
Figure 10.49 Conflict between Buffer Register Write and Compare Match
Address
Write
Compare match
signal
Buffer register
TGR
TGR write cycle
N
Buffer register
address
T
1
T
2
Section 10 16-Bit Timer Pulse Unit (TPU)
M
M
Rev. 2.00 Jun. 28, 2007 Page 485 of 864
Data written to buffer register
REJ09B0341-0200

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