HD6417727F160V Renesas Electronics America, HD6417727F160V Datasheet - Page 389

• Manufacturer Part Number: HD6417727F160V
• Description: MPU 3V 16K PB-FREE 240-QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of HD6417727F160V

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 160MHz
• Connectivity: FIFO, SCI, SIO, SmartCard, USB
• Peripherals: DMA, LCD, POR, WDT
• Number Of I /o: 104
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.7 V ~ 2.05 V
• Data Converters: A/D 6x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 240-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 12 Bus State Controller (BSC)
12.3.4
Synchronous DRAM Interface
Synchronous DRAM Direct Connection: Since synchronous DRAM can be selected by the CS
signal, physical space areas 2 and 3 can be connected using RAS and other control signals in
common. If the memory type bits (DRAMTP2 to DRAMTP0) in BCR1 are set to 010, area 2 is
ordinary memory space and area 3 is synchronous DRAM space; if set to 011, areas 2 and 3 are
both synchronous DRAM space.
With this LSI, burst length 1 burst read/single write mode is supported as the synchronous DRAM
operating mode. A data bus width of 16 or 32 bits can be selected. A 16-bit burst transfer is
performed in a cache fill/write-back cycle, and only one access is performed in a write-through
area write or a non-cacheable area read/write.
The control signals for direct connection of synchronous DRAM are RAS, CAS, RD/WR, CS2 or
CS3, DQMUU, DQMUL, DQMLU, DQMLL, and CKE. All the signals other than CS2 and CS3
are common to all areas, and signals other than CKE are valid and fetched to the synchronous
DRAM only when CS2 or CS3 is asserted. Synchronous DRAM can therefore be connected in
parallel to a number of areas. CKE is negated (low) only when self-refreshing is performed, and is
always asserted (high) at other times.
Commands for synchronous DRAM are specified by RAS, CAS, RD/WR, and special address
signals. The commands are NOP, auto-refresh (REF), self-refresh (SELF), precharge all banks
(PALL), row address strobe bank active (ACTV), read (READ), read with precharge (READA),
write (WRIT), write with precharge (WRITA), and mode register write (MRS).
Byte specification is performed by DQMUU, DQMUL, DQMLU, and DQMLL. A read/write is
performed for the byte for which the corresponding DQM is low. In big-endian mode, DQMUU
specifies an access to address 4n, and DQMLL specifies an access to address 4n + 3. In little-
endian mode, DQMUU specifies an access to address 4n + 3, and DQMLL specifies an access to
address 4n.
Figures 12.11 and 12.12 show examples of the connection of two 1M × 16-bit × 4-bank
synchronous DRAMs and one 1M × 16-bit × 4-bank synchronous DRAM, respectively.
CKIO and CKIO2 are the clock signals that can be input to the synchronous DRAM. When using
multiple synchronous DRAMs, use either CKIO or CKIO2, but not both. Also to prevent big
signal delays due to overloading, design the board so that the load capacity is 50 pF or less.
Aim to ensure wiring lengths are equal and avoid chaining the clock wiring to the synchronous
DRAMs.
Rev.6.00 Mar. 27, 2009 Page 331 of 1036
REJ09B0254-0600