MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 59

• Manufacturer Part Number: MT41J64M16JT-15E AIT:G
• Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
• Manufacturer: Micron

Output Characteristics and Operating Conditions
Table 43: Single-Ended Output Driver Characteristics
All voltages are referenced to V
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
Parameter/Condition
Output leakage current: DQ are disabled;
0V
Output slew rate: Single-ended; For rising and falling edges,
measure between V
V
Single-ended DC high-level output voltage
Single-ended DC mid-point level output voltage
Single-ended DC low-level output voltage
Single-ended AC high-level output voltage
Single-ended AC low-level output voltage
Delta R
Test load for AC timing and output slew rates
REF
+ 0.1 × V
V
OUT
ON
between pull-up and pull-down for DQ/DQS
V
DDQ
DDQ
; ODT is disabled; ODT is HIGH
OL(AC)
Notes:
= V
The DRAM uses both single-ended and differential output drivers. The single-ended
output driver is summarized below, while the differential output driver is summarized
in Table 44 (page 60).
REF
1. RZQ of 240 ±1% with RZQ/7 enabled (default 34 driver) and is applicable after prop-
2. V
3. See Figure 26 (page 61) for the test load configuration.
4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from
5. See Table 33 (page 54) for IV curve linearity. Do not use AC test load.
6. See Table 45 (page 62) for output slew rate.
7. See Table 33 (page 54) for additional information.
8. See Figure 24 (page 60) for an example of a single-ended output signal.
SS
- 0.1 × V
er ZQ calibration has been performed at a stable temperature and voltage (V
V
HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are
either all static or all switching in the opposite direction. For all other DQ signal switch-
ing combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns.
SSQ
TT
= V
= V
DDQ
DDQ
SS
).
/2.
and V
Output Characteristics and Operating Conditions
OH(AC)
=
59
Symbol
MM
1Gb: x8, x16 Automotive DDR3 SDRAM
V
V
V
V
V
SRQ
OM(DC)
OH(DC)
OH(AC)
OL(DC)
OL(AC)
I
Output to V
OZ
PUPD
se
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TT
Min
–10
2.5
–5
V
V
(V
TT
TT
DDQ
0.8 × V
0.5 × V
0.2 × V
+ 0.1 × V
- 0.1 × V
/2) via 25 resistor
DDQ
DDQ
DDQ
DDQ
DDQ
‹ 2010 Micron Technology, Inc. All rights reserved.
Max
10
5
6
Unit
V/ns
μA
%
V
V
V
V
V
DDQ
1, 2, 3, 4
1, 2, 3, 6
1, 2, 3, 6
Notes
1, 2, 5
1, 2, 5
1, 2, 5
= V
1, 7
1
3
DD
;