LPC1343FHN33,551 NXP Semiconductors, LPC1343FHN33,551 Datasheet - Page 308

• Manufacturer Part Number: LPC1343FHN33,551
• Description: IC MCU 32BIT 32KB FLASH 33HVQFN
• Manufacturer: NXP Semiconductors
• Series: LPC13xxr

Specifications of LPC1343FHN33,551

• Program Memory Type: FLASH
• Program Memory Size: 32KB (32K x 8)
• Package / Case: 33-VQFN Exposed Pad, 33-HVQFN, 33-SQFN, 33-DHVQFN
• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: I²C, Microwire, SPI, SSI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 28
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: LPC13
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, UART
• Maximum Clock Frequency: 72 MHz
• Number Of Programmable I/os: 28
• Number Of Timers: 4
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2, KSK-LPC1343
• Development Tools By Supplier: OM11039, OM11040, OM11046, OM11048
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Package: 33HVQFN EP
• Device Core: ARM Cortex M3
• Family Name: LPC1000
• Maximum Speed: 72 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 622-1005 - USB IN-CIRCUIT PROG ARM7 LPC2K
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4944; 935289655551

NXP Semiconductors
UM10375
User manual
19.14.2 Copy RAM to flash
19.14.3 Erase Sector(s)
Table 310. IAP Copy RAM to flash command
Table 311. IAP Erase Sector(s) command
Command
Input
Return Code
Result
Description
Command
Input
Return Code
Result
Description
Copy RAM to flash
Command code: 5110
Param0(DST): Destination flash address where data bytes are to be written. This
address should be a 256 byte boundary.
Param1(SRC): Source RAM address from which data bytes are to be read. This
address should be a word boundary.
Param2: Number of bytes to be written. Should be 256 | 512 | 1024 | 4096.
Param3: System Clock Frequency (CCLK) in kHz.
CMD_SUCCESS |
SRC_ADDR_ERROR (Address not a word boundary) |
DST_ADDR_ERROR (Address not on correct boundary) |
SRC_ADDR_NOT_MAPPED |
DST_ADDR_NOT_MAPPED |
COUNT_ERROR (Byte count is not 256 | 512 | 1024 | 4096) |
SECTOR_NOT_PREPARED_FOR_WRITE_OPERATION |
BUSY
None
This command is used to program the flash memory. The affected sectors should
be prepared first by calling "Prepare Sector for Write Operation" command. The
affected sectors are automatically protected again once the copy command is
successfully executed. The boot sector can not be written by this command. Also
see
Erase Sector(s)
Command code: 5210
Param0: Start Sector Number
Param1: End Sector Number (should be greater than or equal to start sector
number).
Param2: System Clock Frequency (CCLK) in kHz.
CMD_SUCCESS |
BUSY |
SECTOR_NOT_PREPARED_FOR_WRITE_OPERATION |
INVALID_SECTOR
None
This command is used to erase a sector or multiple sectors of on-chip flash
memory. The boot sector can not be erased by this command. To erase a single
sector use the same "Start" and "End" sector numbers.
All information provided in this document is subject to legal disclaimers.
Section 19.6
Rev. 2 — 7 July 2010
Chapter 19: LPC13xx Flash memory programming firmware
for the number of bytes that can be written.
UM10375
© NXP B.V. 2010. All rights reserved.
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