MC908AZ32ACFU Freescale Semiconductor, MC908AZ32ACFU Datasheet - Page 307

• Manufacturer Part Number: MC908AZ32ACFU
• Description: IC MCU 32K FLASH 8.4MHZ 64-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908AZ32ACFU

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 40
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 15x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

25.1.14 FLASH Memory Characteristics
25.2 Mechanical Specifications
Refer to the following pages for detailed package dimensions.
Freescale Semiconductor
FLASH Program Bus Clock Frequency
FLASH Read Bus Clock Frequency
FLASH Page Erase Time (0 to 1k cycles)
FLASH Page Erase Time (1 to 10k cycles)
FLASH Mass Erase Time
FLASH PGM/ERASE to HVEN Set Up Time
FLASH High Voltage Hold Time
FLASH High Voltage Hold Time (Mass)
FLASH Program Hold Time
FLASH Program Time
FLASH Return to Read Time
FLASH Cumulative Program HV Period
FLASH Row Erase Endurance
FLASH Row Program Endurance
FLASH Data Retention Time
1.
2. If the page erase time is longer than
3. If the mass erase time is longer than
4.
5.
6. The minimum row erase endurance value specifies each row of the FLASH memory is guaranteed to work for at least this
7. The minimum row program endurance value specifies each row of the FLASH memory is guaranteed to work for at least
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
t
f
t
memory.
memory.
HVEN to logic 0.
t
many erase cycles.
this many program cycles.
specified.
RCV
READ
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition:
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump by clearing
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(8)
(6)
(7)
t
NVS
+
t
t
t
ERASE
NVH
MERASE
MC68HC908AZ32A Data Sheet, Rev. 2
+ t
(M
PGS
(M
IN
IN
),
+ (
),
there is no erase-disturb, but it reduces the endurance of the FLASH
t
there is no erase-disturb, but it reduces the endurance of the FLASH
PROG
X 64)
ð t
HV
max.
t
Symbol
M
f
t
t
READ
ERASE
ERASE
t
ERASE
t
t
t
RCV
t
t
t
PROG
HV
NVH
NVS
NVH
PGS
—
(5)
(4)
L
(2)
(2)
(1)
(3)
10,000
10,000
Min
32K
100
10
30
10
—
1
1
4
4
5
5
1
Mechanical Specifications
8.4M
Max
40
—
—
—
—
—
—
—
—
—
—
—
4
cycles
cycles
years
MHz
Unit
ms
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
307