M30262F8GP#U7 Renesas Electronics America, M30262F8GP#U7 Datasheet - Page 187

IC M16C/TINY MCU FLASH 48LQFP

M30262F8GP#U7

Manufacturer Part Number
M30262F8GP#U7
Description
IC M16C/TINY MCU FLASH 48LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/Tiny/26r
Datasheets

Specifications of M30262F8GP#U7

Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
38
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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Electrical Characteristics (Vcc = 3V)
Table 1.18.24. Electrical characteristics (referenced to V
Note 1: Specify a product of -40°C to 85°C to use it.
Note 2: With one timer operated using f
Note 3: I
Symbol
R
R
R
V
Icc
I
I
V
V
V
V
V
V
I
I
IH
IL
DET4
DET3
PULLUP
fXIN
fXCIN
RAM
OH
OH
OL
OL
T+-
T+-
V
V
T-
T-
I
I
DET
DET4
DET3
Pull-up
resistance
Feedback resistance
Feedback resistance
RAM retention voltage
Power supply current
(Vcc=2.7 to 3.0V)
V
Reset level detection dissipation current (Note 3)
HIGH output
voltage
HIGH output
voltage
HIGH output
voltage
LOW output
voltage
LOW output
voltage
LOW output
voltage
Hysteresis
Hysteresis
HIGH input
current
LOW input
current
is dissipation current when the following bit is set to "1" (detection circuit enabled).
: VC27 bit of VCR2 register
: VC26 bit of VCR2 register
DET4
Preliminary Specifications Rev. 0.9
Specifications in this manual are tentative and subject to change.
detection dissipation current (Note 3)
unless otherwise specified)
at Topr = – 20
TA0
INT
AD
CLK
KI
P1
P8
P1
P8
X
X
P1
P8
X
X
RESET
P1
P8
X
P1
P8
X
OUT
COUT
OUT
COUT
IN,
IN,
0
5
5
5
5
5
5
5
5
5
5
TRG
0
to KI
to P8
to P8
to P8
IN
to P8
RESET
to P8
RESET
to P1
to P1
to P1
to P1
to P1
, INT
0
to CLK
to TA4
, CTS
3
X
7
X
7
7
, RxD
7
7
7
7
7
1
7
7
, P9
, P6
, P9
, P6
, P9
, P6
, P 9
, P6
, P 9
, P6
, INT
IN
CIN
C32
,
,
Parameter
0
CNV
CNV
2
IN,
to CTS
, TA2
0
0
0
0
0
0
0
.
0
0
0
0
3
TB0
to P9
to P9
to P6
to P6
to P6
to P6
to P6
to P9
to P9
to P9
to RxD
to INT
o
The output pins are open
and other pins are Vss
ss
ss
C to 85
HIGHPOWER
LOWPOWER
HIGHPOWER
LOWPOWER
HIGHPOWER
LOWPOWER
HIGHPOWER
LOWPOWER
OUT
IN
3
3
7
7
7
2
7
7
3
3
3
, P7
, P7
, P7
, P7
, P10
, P7
, P10
to TB2
, SCL, SDA,
, P10
, P10
, P10
5
to TA4
2
, NMI,
2
2
0
0
0
0
0
to P7
to P7
0
to P7
0
to P7
to P7
0
to P10
to P10
IN
to P10
to P10
to P10
Renesas Technology Corp.
OUT
o
,
C / – 40
7
7
7
7
7
, P8
, P8
, P8
, P8
, P8
,
7
7
7
7
7
0
0
0
0
0
to P8
to P8
to P8
to P8
to P8
o
3
3
3
3
3
,
,
,
,
,
C to 85
V
When clock is stopped
I
I
I
With no load applied
With no load applied
I
I
I
With no load applied
With no load applied
V
V
Flash memory
version
Flash memory
version
Flash memory
version
Flash memory
version
OH
OH
OH
OL
OL
OL
I
I
I
o
=0V
=3V
=0V
=1mA
=0.1mA
=50µA
=-1mA
=-0.1mA
=-50µA
C (Note 1), f(X
CC
Measuring condition
= 2.7 to 3.3V, V
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
f(X
f(X
f(X
f(X
f(X
Topr = 25°C
when clock is stopped
S q u a r e w a v e , n o d i v i s i o n
S q u a r e w a v e , i n R A M
S q u a r e w a v e , i n F l a s h
When a WAIT instruction
is executed.(Note 2)
Oscillation capacity High
When a WAIT instruction
is executed.(Note 2)
Oscillation capacity Low
IN
CIN
CIN
CIN
CIN
) = 10MHz
IN
) = 32kHz
) = 32kHz
) = 32kHz
) = 32kHz
) = 10MH
SS
= 0V
Z
with wait
Min.
66
2.0
2.5
2.5
2.5
0.2
0.2
M16C/26 Group
Standard
V
Typ.
25.0
160
1.6
0.6
0.4
2.5
3.0
420
6.0
1.8
0.7
CC
25
0
0
8
Max.
-4.0
500
0.8
1.8
0.5
0.5
0.5
4.0
13
3.0
4
2
= 3V
Unit
MΩ
MΩ
kΩ
µA
µA
µA
µA
µA
µA
µA
µA
mA
µA
V
V
V
V
V
V
V
V
V
179

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