M30262F8GP#U7 Renesas Electronics America, M30262F8GP#U7 Datasheet - Page 206

• Manufacturer Part Number: M30262F8GP#U7
• Description: IC M16C/TINY MCU FLASH 48LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/Tiny/26r

Specifications of M30262F8GP#U7

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

198
CPU Rewrite Mode (Flash Memory Version)
Figure 1.20.4. Block erase flowchart
Block Erase Command (20
By writing the command code “20
in the second bus cycle that follows to the block address of a flash memory block, the system initiates
an auto erase (erase and erase verify) operation.
Whether the auto erase operation is completed can be confirmed by reading the status register or the
flash memory control register 0. At the same time the auto erase operation starts, the read status
register mode is automatically entered, so the content of the status register can be read out. The
status register bit 7 (SR7) is set to 0 at the same time the auto erase operation starts and is returned
to 1 upon completion of the auto erase operation. In this case, the read status register mode remains
active until the Read Array command (FF
flash memory is reset using its reset bit.
The RY/BY status flag of the flash memory control register 0 is 0 during auto erase operation and 1
when the auto erase operation is completed as is the status register bit 7.
After the auto erase operation is completed, the status register can be read out to know the result of
the auto erase operation. For details, refer to the section where the status register is detailed.
Figure 1.20.4 shows an example of a block erase flowchart.
Each block of the flash memory can be protected against erasure by using a lock bit. For details, refer
to the section where the data protect function is detailed.
During EW1 mode, do not execute this command on blocks in which the control program is stored.
Preliminary Specifications Rev. 0.9
Specifications in this manual are tentative and subject to change.
Check full status check
Note 1: Refer to Figure 1.20.6
Note 2: If the error occurs, try to execute clear status register command,
Block address
Status register
Write D0
Block erase
Write 20
completed
(Note 1)
RY/BY=1?
SR7=1?
Start
then block erase command at least three times until erase error
disappears.
read
or
16
YES
/D0
16
16
16
Renesas Technology Corp.
16
)
” in the first bus cycle and the confirmation command code “D0
NO
Error
16
) or Read Lock Bit Status command (71
Erase error (Note 2)
(Set an address to even address in the user
(Set an address to even address in the
ROM area when reading the status register)
user ROM area when write 20
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
16
)
16
M16C/26 Group
) is written or the
16
”