KC82870DH S L5X2 Intel, KC82870DH S L5X2 Datasheet - Page 55

• Manufacturer Part Number: KC82870DH S L5X2
• Manufacturer: Intel

Specifications of KC82870DH S L5X2

• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

5.5.3
Intel
®
Table 5-15. CMOS 1.8V Input DC Parameters (Continued)
Table 5-16. CMOS 1.8V Output DC Parameters
Table 5-17. CMOS 2.5V DC Parameters
Table 5-18. CMOS 1.8V Input AC Parameters
E8870DH DDR Memory Hub (DMH) Datasheet
a. Specified by design characterization.
a. Specified by design characterization.
b. Supply voltage at 1.5V ±5% tolerance.
a. Specified by design characterization.
b. Open Drain. V
AC Specification
a. Specified by design characterization.
b. Overshoot/undershoot duration less than 5 ns.
c. @CLOAD, max = 20pf (SD read data valid).
d. @CLOAD, max = 20pf (SD read data hold).
V
V
Ron
Ron
I
V
I
V
V
V
V
I
Ts1
Th1
Vih
Vil
Tq1
Thr
li
li
li
oH
oL
OL
IH
IL
OH
OL
Symbol
Symbol
Symbol
Symbol
Output Low Voltage
Input Leakage Current
OH,min
CMD Setup Time to SCK Rising or
Falling Edge
CMD Hold Time to SCK Rising or
Falling Edge
Input High Voltage
Input Low Voltage
SCK (neg) -to-SIO Delay
SCK (pos) -to-SIO Delay
Output High Voltage
Output Low Voltage
Output Impedance, Pull-Down
Output Impedance, Pull-Up
Input Leakage current
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
= pull-up voltage.
Parameter
Parameter
Parameter
Parameter
b
a
a
a, b
0.7*(VCC25)
VCC25 max
–500
1.50
–0.5
–0.5
Min
–10
Min
Min
–10
Min
a
2.5
2.5
20
24
5
VCCRAC +0.7
(VCC25 max)
VCC25 max
(VCC25)
Max
Max
0.20
Max
+0.5
0.40
Max
0.3*
500
0.3
10
40
40
10
15
Electrical Specifications
Ohms
Ohms
Unit
Unit
Unit
Unit
µA
µA
µA
ns
ns
ns
ns
V
V
V
V
V
V
V
V
V
Notes
Notes
Notes
Notes
b
b
c
d
5-7