ST7LITE49K2 STMicroelectronics, ST7LITE49K2 Datasheet - Page 211

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ST7LITE49K2

Manufacturer Part Number
ST7LITE49K2
Description
8-bit MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7LITE49K2

8 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance
10K write/erase cycles guaranteed Data retention
256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55 °C.
Clock Sources
Internal trimmable 8 MHz RC oscillator, auto-wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-halt, Auto-wakeup from Halt, Wait and Slow

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ST7LITE49K2
13.7
Memory characteristics
T
Table 89.
1. Minimum V
Table 90.
1. Up to 32 bytes can be programmed at a time.
2. Data based on reliability test results and monitored in production.
3. The data retention time increases when the T
4. Guaranteed by Design. Not tested in production.
Table 91.
1. Data based on reliability test results and monitored in production.
2. The data retention time increases when the T
Symbol
Symbol
Symbol
A
N
N
V
t
t
t
V
V
= -40 °C to 125 °C, unless otherwise specified.
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
I
prog
RET
prog
t
DD
RM
RW
ret
RW
DD
DD
Programming time for 4 kbytes
EEPROM Write/Erase
DD
Programming time for
Operating voltage for
RAM and hardware registers characteristics
Flash program memory characteristics
Programming time for 1~32
Data EEPROM memory characteristics
Operating voltage for Flash
Data retention mode
Write erase cycles
Data retention
supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in
Write erase cycles
1~32 bytes
Parameter
Supply current
Data retention
Parameter
Parameter
write/erase
bytes
(1)
(1)
(2)
(4)
(1)
V
DD
Refer to operating range of
Halt mode (or Reset)
A
A
with T
decreases.
T
decreases.
A
range of V
Read / Write / Erase
=− 40 to +125 °C
Conditions
Power down mode /
T
Conditions
No Read/No Write
Refer to operating
T
Section 13.3.1 on
A
T
A,
page 195
A
A
=+55 °C
f
=− 40 to +125 °C
CPU
T
=+25 °C
V
Section 13.3.1 on
Conditions
T
A
T
page 195
DD
A
A
=+55 °C
modes
=+25 °C
=+25 °C
mode
= 8 MHz,
Halt
= 5.5 V
DD
(2)
with T
(3)
A,
Min
1.6
Electrical characteristics
Min
2.4
Min
20
2.4
20
Typ
0.64
Typ
Typ
5
0
5
Max
300K cycles
Max
Max
1.28
100
10k
5.5
5.5
2.6
0.1
10
10
211/245
cycles
years
years
Unit
Unit
Unit
ms
mA
ms
μA
μA
V
V
V
s

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