ST7LITE49K2 STMicroelectronics, ST7LITE49K2 Datasheet - Page 228

• Manufacturer Part Number: ST7LITE49K2
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST7LITE49K2

• 8 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance: 10K write/erase cycles guaranteed Data retention
• 256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55 °C.
• Clock Sources: Internal trimmable 8 MHz RC oscillator, auto-wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-halt, Auto-wakeup from Halt, Wait and Slow

Electrical characteristics
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Figure 125. ADC accuracy characteristics
Table 103. Amplifier characteristics
1.
2. Data based on characterization results over the whole temperature range, not tested in production.
3.
4. Monotonicity guaranteed if V
5. For precise conversion results it is recommended to calibrate the amplifier at the following two points: offset
V
Linearity
Gain factor
V
V
Vmax
OFFSET
1023
1022
1021
Symbol
Vmin
DD(AMP)
STEP
Please refer to the Application Note AN1830 for details of TE% vs Vin.
Refer to the offset variation in temperature below
at V
V
7
6
5
4
3
2
1
(2)
0
IN
V
INmin
SS
(2)
(2)
(2)
(2)
(2)
1
= 0V ; gain at full scale (for example V
E
1LSB
O
Amplified analog input gain
Digital Result
Step size for monotonicity
Output linearity max voltage
Output linearity min voltage
Amplifier operating voltage
2
IDEAL
Output voltage response
Amplifier input voltage
Amplifier output offset
3
=
V
------------------------------- -
Parameter
4
voltage
DD
1024
–
5
V
1 LSB
SS
IN
E
increases or decreases in steps of min. 5mV.
(3)
6
T
IDEAL
E
7
L
(2)
(1)
(4)
(5)
E
D
1021 1022 1023 1024
IN
(3)
V
= 430 mV)
INmax
Conditions
V
V
V
V
V
V
DD
DD
(1)
DD
DD
DD
DD
= 430 mV,
= 3.6 V
= 3.6 V
E
= 5 V
= 5 V
= 5 V
= 5 V
G
V
DD
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer
curves.
EO=Offset Error: deviation between the first
actual transition and the first ideal one.
EG=Gain Error: deviation between the last
ideal transition and the last actual one.
ED=Differential Linearity Error: maximum
deviation between actual steps and the ideal
one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
4.89
Min
3.6
3.5
0
0
V
in
(LSB
3.65
Typ
200
200
8
IDEAL
linear
)
ST7LITE49K2
Max
350
500
5.5
Unit
mV
mV
mV
mV
V
V