ST7LITE49K2 STMicroelectronics, ST7LITE49K2 Datasheet - Page 213

• Manufacturer Part Number: ST7LITE49K2
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST7LITE49K2

• 8 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance: 10K write/erase cycles guaranteed Data retention
• 256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55 °C.
• Clock Sources: Internal trimmable 8 MHz RC oscillator, auto-wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-halt, Auto-wakeup from Halt, Wait and Slow

ST7LITE49K2
13.8.2
13.8.3
EMI (electromagnetic interference)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 93.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body model and Machine model. This test conforms to the
JESD22-A114A/A115A standard. For more details, refer to the application note AN1181.
Table 94.
1. Data based on characterization results, not tested in production.
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up
performance.
●
●
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
V
Symbol
V
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin.
Parameter
Peak level
EMI emissions
ESD absolute maximum ratings
Electrostatic discharge voltage (Charge Device
Electrostatic discharge voltage (Human Body
package,T
conforming to SAE
V
DD
Conditions
=5 V, SDIP32
J 1752/3
Ratings
model)
model)
A
= +25 °C,
30 MHz to 130 MHz
0.1 MHz to 30 MHz
130 MHz to 1 GHz
frequency band
SAE EMI Level
Monitored
Conditions
T
T
A
A
=+25 °C
=+25 °C
Electrical characteristics
8/4MHz 16/8MHz
29
29
21
3
[f
Max vs.
OSC
Maximum
/f
value
CPU
4000
500
3.5
34
34
22
]
(1)
213/245
dBμV
Unit
Unit
-
V