R5F61668RN50FPV Renesas Electronics America, R5F61668RN50FPV Datasheet - Page 1151

• Manufacturer Part Number: R5F61668RN50FPV
• Description: IC H8SX/1668 MCU FLASH 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61668RN50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: R0K561668S000BE - KIT STARTER FOR H8SX/1668R0K561664S001BE - KIT STARTER FOR H8SX/1651HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Flash Memory
25.7
Register Descriptions
The flash memory has the following registers.
Programming/Erasing Interface Registers:
• Flash code control/status register (FCCS)
• Flash program code select register (FPCS)
• Flash erase code select register (FECS)
• Flash key code register (FKEY)
• Flash MAT select register (FMATS)
• Flash transfer destination address register (FTDAR)
Programming/Erasing Interface Parameters:
• Download pass and fail result parameter (DPFR)
• Flash pass and fail result parameter (FPFR)
• Flash program/erase frequency parameter (FPEFEQ)
• Flash multipurpose address area parameter (FMPAR)
• Flash multipurpose data destination area parameter (FMPDR)
• Flash erase block select parameter (FEBS)
• RAM emulation register (RAMER)
There are several operating modes for accessing the flash memory. Respective operating modes,
registers, and parameters are assigned to the user MAT and user boot MAT. The correspondence
between operating modes and registers/parameters for use is shown in table 25.3.
Rev. 2.00 Sep. 24, 2008 Page 1117 of 1468
REJ09B0412-0200