R5F61668RN50FPV Renesas Electronics America, R5F61668RN50FPV Datasheet - Page 572

IC H8SX/1668 MCU FLASH 144LQFP

R5F61668RN50FPV

Manufacturer Part Number
R5F61668RN50FPV
Description
IC H8SX/1668 MCU FLASH 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61668RN50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
R0K561668S000BE - KIT STARTER FOR H8SX/1668R0K561664S001BE - KIT STARTER FOR H8SX/1651HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61668RN50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 11 EXDMA Controller (EXDMAC)
(2)
Figure 11.62 shows an example of cluster transfer mode transfer activated by the EDREQ pin
falling edge.
EDREQ pin sampling is performed in each cycle starting at the next rise of Bφ after the end of the
DTE bit write cycle.
When a low level is sampled at the EDREQ pin while acceptance of a transfer request via the
EDREQ pin is possible, the request is held within the EXDMAC. Then when activation is initiated
within the EXDMAC, the request is cleared, and EDREQ pin high level sampling for edge sensing
is started. If EDREQ pin high level sampling is completed by the end of the last cluster write
cycle, acceptance resumes after the end of the write cycle, and EDREQ pin low level sampling is
performed again. This sequence of operations is repeated until the end of the transfer.
Rev. 2.00 Sep. 24, 2008 Page 538 of 1468
REJ09B0412-0200
EDREQ
Address bus
EXDMA control
Channel
[1]
[2] [5]
[3] [6]
[4] [7]
Acceptance after transfer enabling; EDREQ pin low level is sampled at rise of Bφ, and request is held.
Request is cleared at end of next bus cycle, and activation is started in EXDMAC.
EXDMA cycle starts; EDREQ pin high level sampling is started at rise of Bφ.
When EDREQ pin high level has been sampled, acceptance is resumed after completion of write cycle.
(As in [1], EDREQ pin low level is sampled at rise of Bφ, and request is held.)
EDREQ Pin Falling Edge Activation Timing
Figure 11.62 Example of Cluster Transfer Mode Transfer Activated
[1]
Request
Minimum 3 cycles
Bus release
[2]
Consecutive read
[3]
Request clearance period
Transfer source
by EDREQ Pin Falling Edge
One cluster transfer
Consecutive write
Transfer destination
[4]
Request
Minimum 3 cycles
Bus release
[5]
Consecutive read
[6]
Transfer source
Request clearance period
One cluster transfer
Consecutive write
Transfer destination
[7]

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