R5F61668RN50FPV Renesas Electronics America, R5F61668RN50FPV Datasheet - Page 331

• Manufacturer Part Number: R5F61668RN50FPV
• Description: IC H8SX/1668 MCU FLASH 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61668RN50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: R0K561668S000BE - KIT STARTER FOR H8SX/1668R0K561664S001BE - KIT STARTER FOR H8SX/1651HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(b) RAS Up Mode
Set the BE bit in DRAMCR to 1 and clear the RCDM bit in DRAMCR to 0 to set the RAS up
mode.
Whenever a DRAM space access is halted and other spaces are accessed, the RAS signal is driven
high. Only when the DRAM space continues to be accessed, the fast-page mode access (burst
access) is performed.
Figure 9.51 shows a timing example of RAS up mode.
Address bus
Figure 9.51 Timing Example of RAS Up Mode (RAST = 0, CAST = 0)
Data bus
RD/WR
LUCAS
LLCAS
RAS
WE
BS
RD
OE
Bφ
T
Row address
p
DRAM space read
T
r
Column address
T
c1
High
T
c2
DRAM space read
Column address
T
c1
Rev. 2.00 Sep. 24, 2008 Page 297 of 1468
T
c2
Basic bus space read
Section 9 Bus Controller (BSC)
External address
T
1
T
2
REJ09B0412-0200