HD64F7047FW40V Renesas Electronics America, HD64F7047FW40V Datasheet - Page 615

• Manufacturer Part Number: HD64F7047FW40V
• Description: MCU 5V 256K I-TEMP,PB-FREE 100-Q
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7047r

Specifications of HD64F7047FW40V

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CAN, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

bit during programming, erasing, or verifying. Similarly, when using the RAM emulation function
while a low level is being input to the FWP pin, the SWE bit must be cleared before executing a
program or reading data in flash memory. However, the RAM area overlapping flash memory
space can be read and written to regardless of whether the SWE bit is set or cleared.
Do not use interrupts while flash memory is being programmed or erased: All interrupt
requests, including NMI, should be disabled during FWP application to give priority to
program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming: In on-
board programming, perform only one programming operation on a 128-byte programming unit
block. In programmer mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Before programming, check that the chip is correctly mounted in the EPROM programmer:
Overcurrent damage to the device can result if the index marks on the EPROM programmer
socket, socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming: Casual contact with either of
these by hand or something while programming can generate a transient noise on the FWP and
RESET pins or cause incorrect programming or erasing due to bad electrical contact.
Reset the flash memory before turning on the power: If V
is applied to the RESET pin while
CC
in high state, mode signals are not correctly downloaded, causing MCU's runaway. In a case
where FWP pin is in low state, incorrect programming or erasing can occur.
Apply the reset signal while SWE is low to reset the flash memory during its operation: The
reset signal is applied at least 100 µs after the SWE bit has been cleard.
Comply with power-on procedure designated by the programmer maker: When executing an
on-board writing with a programmer, incorrect programming or erasing may occur unless the
power-on procedure designated by the programmer makers is applied.
Rev. 2.00, 09/04, page 573 of 720