p2125vps20 Renesas Electronics Corporation., p2125vps20 Datasheet - Page 538

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p2125vps20

Manufacturer Part Number
p2125vps20
Description
16-bit Single-chip Microcomputer H8s Family / H8s/2100 Series
Manufacturer
Renesas Electronics Corporation.
Datasheet
Section 19 Flash Memory (0.18-µm F-ZTAT Version)
(d) The return value in the erasing program, FPFR (general register R0L) is determined.
(e)
If more than one block is to be erased, update the FEBS parameter and repeat steps (b) to (e).
Blocks that have already been erased can be erased again.
(f)
If this LSI is restarted by a reset immediately after user MAT erasure has completed, secure a reset
period (period of RES = 0) of 100 µs which is longer than normal.
(4)
By changing the on-chip RAM address of the download destination in FTDAR, the erasing
program and programming program can be downloaded to separate on-chip RAM areas.
Figure 19.13 shows a repeating procedure of erasing and programming.
Rev. 1.00 Sep. 21, 2006 Page 500 of 658
REJ09B0310-0100
Determine whether erasure of the necessary blocks has completed.
After erasure completes, clear FKEY and specify software protection.
Erasing and Programming Procedure in User Program Mode
Figure 19.13 Repeating Procedure of Erasing and Programming
destination for programming
Download erasing program
Initialize erasing program
Start procedure program
Download programming
destination for erasing
Initialize programming
Specify a download
program by FTDAR
Specify a download
program by FTDAR
program
program
1
(execute erasing program)
End procedure program
(execute programming
program relevant block
Erase relevant block
Confirm operation
Set FMPDR to
program)
End ?
1
Yes
No

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