DF38602RFT10 Renesas Electronics America, DF38602RFT10 Datasheet - Page 149
![MCU 3V 16K 32-QFN](/photos/12/38/123805/32-qfn_pkg_sml.jpg)
DF38602RFT10
Manufacturer Part Number
DF38602RFT10
Description
MCU 3V 16K 32-QFN
Manufacturer
Renesas Electronics America
Series
H8® H8/300H SLPr
Datasheet
1.DF38602RFT10.pdf
(554 pages)
Specifications of DF38602RFT10
Core Processor
H8/300H
Core Size
16-Bit
Speed
10MHz
Connectivity
I²C, IrDA, SCI, SSU
Peripherals
POR, PWM, WDT
Number Of I /o
13
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
32-QFN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F38602RFT10
HD64F38602RFT10
HD64F38602RFT10
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF38602RFT10V
Manufacturer:
Renesas Electronics America
Quantity:
135
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The FLMCR1, FLMCR2, and EBR1 settings are retained, however programming mode or erasing
mode is aborted when the error occurred. Programming mode or erasing mode cannot be re-
entered by re-setting the P or E bit. However, settings of the PV and EV bits are retained, and a
transition can be made to the verifying mode. The error protection state can be cleared only by a
reset.
6.6
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
• Power-down operating mode
• Standby mode
Table 6.7 shows the correspondence between the operating modes of this LSI and the flash
memory. In subactive mode, the flash memory can be set to operate in power-down mode with the
PDWND bit in FLPWCR. When the flash memory returns to its normal operating state from the
power-down mode or standby mode, a period to stabilize operation of the power supply circuits
that were stopped is needed. When the flash memory returns to its normal operating state, bits
STS2 to STS0 in SYSCR1 must be set to provide a wait time of at least 20 µs, even when the
external clock is being used.
Table 6.7
LSI Operating State
Active mode
Subactive mode
Sleep mode
Subsleep mode
Watch mode
Standby mode
The flash memory can be read at high speed.
The power supply circuit of flash memory can be partly halted. As a result, flash memory can
be read with low power consumption.
All flash memory circuits are halted.
Power-Down States for Flash Memory
Flash Memory Operating States
PDWND = 0 (Initial Value)
Normal operating mode
Power-down mode
Normal operating mode
Standby mode
Standby mode
Standby mode
Flash Memory Operating State
Rev. 3.00 May 15, 2007 Page 115 of 518
PDWND = 1
Normal operating mode
Normal operating mode
Normal operating mode
Standby mode
Standby mode
Standby mode
REJ09B0152-0300
Section 6 ROM
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