M68HC12A4EVB Freescale Semiconductor, M68HC12A4EVB Datasheet - Page 107

• Manufacturer Part Number: M68HC12A4EVB
• Manufacturer: Freescale Semiconductor

Specifications of M68HC12A4EVB

• Lead Free Status / Rohs Status: Not Compliant

8.6 Erasing the FLASH EEPROM
This sequence demonstrates the recommended procedure for erasing the FLASH EEPROM. The V
voltage must be at the proper level prior to executing step 4 the first time.
The flowchart in
Freescale Semiconductor
10. If all of the FLASH EEPROM locations are erased, repeat the same number of pulses as required
11. Read the entire array to ensure that the FLASH EEPROM is erased.
12. Clear LAT.
13. Turn off V
1. Turn on V
2. Set the LAT bit and ERAS bit to configure the FLASH EEPROM for erasing.
3. Write to any valid address in the FLASH array. This allows the erase voltage to be turned on; the
4. Apply erase voltage by setting ENPE.
5. Delay for a single erase pulse, t
6. Remove erase voltage by clearing ENPE.
7. Delay while high voltage is turning off, t
8. Read the entire array to ensure that the FLASH EEPROM is erased.
9. If all of the FLASH EEPROM locations are not erased, repeat steps 4 through 7 until either the
data written and the address written are not important. The boot block will be erased only if the
control bit BOOTP is negated.
remaining locations are erased or until the maximum erase pulses have been applied, n
to erase the array. This provides 100 percent erase margin.
FP
FP
Figure 8-6
. Apply program/erase voltage to the V
. Reduce voltage on V
demonstrates the recommended erase sequence.
M68HC12B Family Data Sheet, Rev. 9.1
EPULSE
FP
pin to V
.
VERASE
DD
.
.
FP
pin.
Erasing the FLASH EEPROM
EP
.
FP
pin
107