LM3S2965-IRN50-A1T ETC2 [List of Unclassifed Manufacturers], LM3S2965-IRN50-A1T Datasheet - Page 537

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LM3S2965-IRN50-A1T

Manufacturer Part Number
LM3S2965-IRN50-A1T
Description
Microcontroller
Manufacturer
ETC2 [List of Unclassifed Manufacturers]
Datasheet
23.1.5
23.2
23.2.1
23.2.2
November 30, 2007
Flash Memory Characteristics
Table 23-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 23-1. Load Conditions
Clocks
Table 23-6. Phase Locked Loop (PLL) Characteristics
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Table 23-7. Clock Characteristics
Parameter
Parameter
f
f
f
T
f
f
f
f
f
ref_crystal
ref_ext
pll
IOSC
IOSC30KHZ
XOSC
XOSC_XTAL
XOSC_EXT
READY
Parameter
T
PE
T
pin
T
ERASE
(RCC) register.
T
PROG
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C
Word program time
Page erase time
Mass erase time
Parameter Name
Crystal reference
External clock reference
PLL frequency
PLL lock time
Parameter Name
Internal 12 MHz oscillator frequency
Internal 30 KHz oscillator frequency
Hibernation module oscillator frequency
Crystal reference for hibernation oscillator
External clock reference for hibernation module
GND
C
L
b
= 50 pF
a
a
3.579545
3.579545
Min
-
-
Preliminary
Nom
400
-
-
-
8.192
8.192
Max
0.5
-
MHz
MHz
MHz
Unit
ms
a
10,000
Min
200
10
20
20
100,000
Nom
Min
8.4
-
-
-
-
21
-
-
-
4.194304
4.194304
LM3S2965 Microcontroller
Max
32.768
Nom
-
-
-
-
-
12
30
cycles
years
Unit
ms
ms
µs
Max
15.6
39
-
-
-
MHz
MHz
MHz
Unit
KHz
KHz
537

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