MC68HC908AS60MFN MOTOROLA [Motorola, Inc], MC68HC908AS60MFN Datasheet - Page 66

• Manufacturer Part Number: MC68HC908AS60MFN
• Description: HCMOS Microcontroller Unit
• Manufacturer: MOTOROLA [Motorola, Inc]

FLASH-1 Memory
Technical Data
66
BLK1— Block Erase Control Bit
BLK0 — Block Erase Control Bit
HVEN — High-Voltage Enable Bit
MARGIN — Margin Read Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
This read/write bit together with BLK0 allows erasing of blocks of
varying size. See
available block sizes.
This read/write bit together with BLK1 allows erasing of blocks of
varying size. See
available block sizes.
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can be set only if
either PGM = 1 or ERASE = 1 and the proper sequence for
program/margin read or erase is followed.
This read/write bit configures the memory for margin read operation.
MARGIN cannot be set if the HVEN = 1. MARGIN will automatically
return to unset (0) if asserted when HVEN = 1.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
set at the same time.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
set at the same time.
Freescale Semiconductor, Inc.
For More Information On This Product,
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Margin read operation selected
0 = Margin read operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Go to: www.freescale.com
FLASH-1 Memory
4.6 FLASH Erase Operation
4.6 FLASH Erase Operation
MC68HC908AS60 — Rev. 1.0
for a description of
for a description of
MOTOROLA