DF2398F20V Renesas Electronics America, DF2398F20V Datasheet - Page 608

IC H8S/2300 MCU FLASH 128QFP

DF2398F20V

Manufacturer Part Number
DF2398F20V
Description
IC H8S/2300 MCU FLASH 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2398F20V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
YR0K42378FC000BA - KIT EVAL FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2398F20V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2398F20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Rev.6.00 Oct.28.2004 page 578 of 1016
REJ09B0138-0600H
User program mode
1. Initial state
3. Flash memory initialization
(1) The FWE assessment program that confirms
that the FWE pin has been driven high, and (2)
the program that will transfer the programming/
erase control program to on-chip RAM should be
written into the flash memory by the user
beforehand. (3) The programming/erase control
program should be prepared in the host or in the
flash memory.
The programming/erase program in RAM is
executed, and the flash memory is initialized (to
H'FF). Erasing can be performed in block units,
but not in byte units.
H8S/2357 Group chip
H8S/2357 Group chip
Application program
Transfer program
Transfer program
FWE assessment
FWE assessment
Flash memory
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
erase
erase control program
New application
New application
Programming/
program
program
Host
Host
Figure 19-10 User Program Mode (Example)
erase control program
Programming/
RAM
RAM
SCI
SCI
2. Programming/erase control program transfer
4. Writing new application program
H8S/2357 Group chip
H8S/2357 Group chip
When the FWE pin is driven high, user software
confirms this fact, executes the transfer program
in the flash memory, and transfers the
programming/erase control program to RAM.
Next, the new application program in the host is
written into the erased flash memory blocks. Do
not write to unerased blocks.
Application program
Transfer program
New application
FWE assessment
FWE assessment
Transfer program
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
program
New application
program
Host
Host
erase control program
erase control program
Programming/
Programming/
Program execution state
RAM
RAM
SCI
SCI

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