DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 211

MCU 3/5V 128K PB-FREE 100-TQFP

DF3048BVX25V

Manufacturer Part Number
DF3048BVX25V
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3048BVX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3048BVX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Example 4: Connection to Multiple 4-Mbit DRAM Chips (16-Mbyte Mode)
Figure 7.13 shows an example of interconnections to two 2CAS 4-Mbit DRAM chips, and the
corresponding address map. Up to four DRAM chips can be connected to area 3 by decoding
upper address bits A
Figure 7.14 shows a setup procedure to be followed by a program for this example. The DRAM in
this example has 9-bit row addresses and 9-bit column addresses. Both chips must be refreshed
simultaneously, so the RFSH pin must be used.
Figure 7.12 Setup Procedure for 2CAS
19
and A
20
.
Column Address (16-Mbyte Mode)
Set bits CKS2 to CKS0 in RTMCSR
Set P8 DDR to 1 for
Wait for DRAM to be initialized
Set area 3 for 16-bit access
DRAM can be accessed
Write H'3B in RFSHCR
CAS
CAS 4-Mbit DRAM with 9-Bit Row Address and 9-Bit
CAS
1
Set RTCOR
CS
Rev. 3.00 Sep 27, 2006 page 183 of 872
3
output
Section 7 Refresh Controller
REJ09B0325-0300

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