DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 702

• Manufacturer Part Number: DF3048BVX25V
• Description: MCU 3/5V 128K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048BVX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
Rev. 3.00 Sep 27, 2006 page 674 of 872
REJ09B0325-0300
2. Programming time per 128 bytes (Shows the total period for which the P bit in the flash
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
4. To specify the maximum programming time (t
5. For the maximum erase time (t
The wait time after P bit setting should be changed as follows according to the value of
Examples: When t
erase/erase-verify flowchart.
memory control register 1 (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
flowchart, set the maximum value (1000) for the maximum programming count (N).
the programming counter (n).
wait time after E bit setting (t
To set the maximum erase time, the values of t
the above formula.
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
t
E
(max) = Wait time after E bit setting (t
When t
se
se
= 100 [ms], N = 12 times
= 10 [ms], N = 120 times
se
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
se
P
)
(max)) in the 128-byte programming
se
and N should be set so as to satisfy
maximum erase count (N)
t
t
sp30
sp200
sp10
= 30 µs
= 10 µs
= 200 µs