DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 701

• Manufacturer Part Number: DF3048BVX25V
• Description: MCU 3/5V 128K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048BVX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Table 21.11 Flash Memory Characteristics (2)
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Programming Wait time after SWE bit setting *
Erase
1
*
3
*
T
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy
write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming
count *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy
write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
5
a
CC
= 0°C to +75°C (operating temperature range for programming/erasing)
= 3.0 to 3.6 V, AV
1
*
1
1
2
1
*
*
4
4
1
*
CC
5
1
1
= 3.0 to 3.6 V, V
1
1
1
1
*
*
1
1
1
1
1
1
4
5
1
1
1
1
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
N
t
t
t
t
t
t
t
t
t
N
P
E
sswe
spsu
sp30
sp200
sp10
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
WEC
Min
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
12
REF
Rev. 3.00 Sep 27, 2006 page 673 of 872
= 3.0 V to AV
Typ
10
100
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
Section 21 Electrical Characteristics
Max
200
1200
100
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
CC
, V
Unit
ms/
128 bytes
ms/block
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
SS
= AV
REJ09B0325-0300
SS
Notes
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time wait
= 0 V,