DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 639

• Manufacturer Part Number: DF3048BVX25V
• Description: MCU 3/5V 128K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048BVX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.8.2
Software protection can be implemented by setting, erase block register (EBR) and the RAMS bit
in the RAM control register (RAMCR). When software protection is in effect, setting the P or E
bit in flash memory control register 1 (FLMCR1) does not cause a transition to program mode or
erase mode. (See table 18.12.)
Table 18.12 Software Protection
Item
Block
specification
protection
Emulation
protection
Notes: 1. A RAM area overlapping flash memory can be written to.
2. When not erasing, clear all EBR bits to 0.
3. All blocks are unerasable and block-by-block specification is not possible.
Software Protection
Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
Description
Erase protection can be set for individual
blocks by settings in erase block register
(EBR) *
However, programming protection is disabled.
Setting EBR to H'00 places all blocks in the
erase-protected state.
Setting the RAMS bit to 1 in the RAM
control register (RAMCR) places all blocks
in the program/erase-protected state.
2
.
Rev. 3.00 Sep 27, 2006 page 611 of 872
Program Erase
—
No *
1
Functions
No
No *
REJ09B0325-0300
3
Verify
Yes
Yes