DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 627

• Manufacturer Part Number: DF3048BVX25V
• Description: MCU 3/5V 128K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048BVX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Since the flash memory cannot be read while it is being programmed/erased, place a programming
program on external memory, or transfer the programming program to RAM area, and execute it
in the RAM.
Figure 18.11 shows the procedure for executing when transferred to on-chip RAM. During reset
start, starting from the user program mode is possible.
1
2
3
4
5
6
7
8
Branch to programming/erasing
(flash memory reprogramming)
Transfer programming/erasing
Execute programming/erasing
Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
MD
(user program mode exit)
program in flash memory
Execute user application
Input low level to FWE
Figure 18.11 User Program Mode Execution Procedure (Example)
program in RAM area
(user program mode)
2
after SWE bit clear
–MD
program to RAM
program in RAM
FWE = high
Reset start
0
= 101, 110, 111
Procedure
The user writes a program that executes steps
3 to 8 in advance as shown below.
1. Sets the mode pin to an on-chip ROM
2. Starts the CPU via reset.
3. Transfers the programming/erasing program
4. Branches to the program in RAM area.
5. Sets the FWE pin to a high level.*
6. After confirming that the FWE pin is a high
7. At the end of reprograming, clears the SWE
8. Branches to, and executes, the user
Note: * For notes on FWE pin High/Low, see
enable mode (mode 5, 6, or 7).
(The CPU can also be started from the user
program mode by setting the FWE pin to
High level during reset; that is, during the
period the RES pin is a low level.)
to RAM.
(Switches to user program mode.)
level, executes the programming/erasing
program in RAM. This reprograms the user
application program in flash memory.
bit, and exits the user program mode by
switching the FWE pin from a high level to a
low level. *
application program reprogrammed in flash
memory.
Rev. 3.00 Sep 27, 2006 page 599 of 872
section 18.11, Notes on Flash Memory
Programming/Erasing.
REJ09B0325-0300