DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 647

• Manufacturer Part Number: DF3048BVX25V
• Description: MCU 3/5V 128K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048BVX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.11
The following describes notes when using the on-board programming mode, RAM emulation
function, and PROM mode.
1. Program/erase with the specified voltage and timing.
2. Notes on powering on/powering off (see figures 18.18 to 18.20)
3. Notes on FWE pin High/Low switching (see figures 18.18 to 18.20)
Applied voltages in excess of the rating can permanently damage the device.
Note that the pins FWE, V
H8/3048F-ONE (single power supply) and H8/3048F (dual power supply) models.
Use a PROM writer that supports the Renesas Technology 128 kbytes flash memory on-board
microcomputer device type.
Do not select the HN28F101 as the PROM writer. Otherwise, 12 V will be applied to the FWE
pin and this will permanently damage H8/3048F-ONE.
Input a high level to the FWE pin after verifying Vcc. Before turning off Vcc, set the FWE pin
to a low level.
When powering on and powering off the Vcc power supply, fix the FWE pin low and set the
flash memory to the hardware protection mode.
Be sure that the powering on and powering off timing is satisfied even when the power is
turned off and back on in the event of a power interruption, etc. If this timing is not satisfied,
microcomputer runaway, etc., may cause overprogramming or overerasing and the memory
cells may not operate normally.
Input FWE in the state microcomputer operation is verified. If the microcomputer does not
satisfy the operation confirmation state, fix the FWE pin low to set the protection mode.
To prevent erroneous programming/erasing of flash memory, note the following in FWE pin
High/Low switching:
a. Apply an input to the FWE pin after the Vcc voltage has stabilized within the rated voltage.
b. Apply an input to the FWE pin when the oscillation has stabilized (after the oscillation
If an input is applied to the FWE pin when the microcomputer Vcc voltage does not satisfy
the rated voltage, flash memory may be erroneously programmed or erased because the
microcomputer is in the unconfirmed state.
stabilization time).
When turning on the Vcc power, apply an input to the FWE pin after holding the RES pin
at a low level during the oscillation stabilization time. Do not apply an input to the FWE
pin when oscillation is stopped or unstable.
Notes on Flash Memory Programming/Erasing
Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
PP
, and MD2 have different absolute maximum ratings between the
Rev. 3.00 Sep 27, 2006 page 619 of 872
REJ09B0325-0300