DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 635

• Manufacturer Part Number: DF3048BVX25V
• Description: MCU 3/5V 128K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048BVX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.7.3
To erase an individual flash memory block, follow the flowchart for erasing one block (single-
block erase) shown in figure 18.14.
The wait times after bits are set or cleared in the flash memory control register 1 (FLMCR1) and
the maximum number of erase operations (N) are shown in table 21.11 in section 21.1.6, Flash
Memory Characteristics.
To erase flash memory contents, make a 1-bit setting for the flash memory area to be erased in
erase block register (EBR1) at least (t
watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. Set a value
greater than (t
erase mode (erase setup) is performed next by setting the ESU bit in FLMCR1. The operating
mode is then switched to erase mode by setting the E bit in FLMCR1 after the elapse of at least
(t
erase time does not exceed (t
Note: With flash memory erasing, preprogramming (setting all memory data in the memory to
18.7.4
In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the fixed erase time, clear the E bit in FLMCR1, then wait for at least (t
before clearing the ESU bit to exit erase mode. After exiting erase mode, the watchdog timer
setting is also cleared. The operating mode is then switched to erase-verify mode by setting the EV
bit in FLMCR1. Before reading in erase-verify mode, a dummy write of H'FF data should be made
to the addresses to be read. The dummy write should be executed after the elapse of (t
more. When the flash memory is read in this state (verify data is read in 16-bit units), the data at
the latched address is read. Wait at least (t
operation. If the read data has been erased (all 1), a dummy write is performed to the next address,
and erase-verify is performed. If the read data is unerased, set erase mode again, and repeat the
erase/erase-verify sequence as before. The maximum value for repetition of the erase/erase-verify
sequence is indicated by the maximum erase count (N). When verification is completed, exit
erase-verify mode, and wait for at least (t
blocks, clear bit SWE1 in FLMCR1, and leave a wait time of at least (t
sesu
) µs. The time during which the E bit is set is the flash memory erase time. Ensure that the
be erased to all 0) is not necessary before starting the erase procedure.
Erase Mode
Erase-Verify Mode
Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
se
) ms + (t
sesu
+ t
se
ce
) ms.
+ t
cesu
) µs as the WDT overflow period. Preparation for entering
sswe
) µs after setting the SWE bit to 1 in FLMCR1. Next, the
cev
sevr
) µs. If erasure has been completed on all the erase
) µs after the dummy write before performing this read
Rev. 3.00 Sep 27, 2006 page 607 of 872
cswe
) µs.
REJ09B0325-0300
sev
) µs or
ce
) µs