C8051F930-TB Silicon Laboratories Inc, C8051F930-TB Datasheet - Page 44
![BOARD TARGET/PROTO W/C8051F930](/photos/9/25/92560/c8051f930-tb_sml.jpg)
C8051F930-TB
Manufacturer Part Number
C8051F930-TB
Description
BOARD TARGET/PROTO W/C8051F930
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Specifications of C8051F930-TB
Contents
Board
Processor To Be Evaluated
C8051F930
Processor Series
C8051F9xx
Data Bus Width
8 bit
Interface Type
I2C, UART, SPI
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
0.9 V to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051F930
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1472
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Table 4.2. Global Electrical Characteristics
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Battery Supply Voltage (VBAT) One-Cell Mode
Supply Voltage (VDD/DC+)
Minimum RAM Data
Retention Voltage
SYSCLK (System Clock)
T
T
Specified Operating
Temperature Range
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
I
I
Digital Supply Current—CPU Inactive (Idle Mode, not fetching instructions from Flash)
I
I
DD
DD
DD
DD
SYSH
SYSL
C8051F93x-C8051F92x
4.2.
44
4, 6, 7
3, 4, 5, 6
Frequency Sensitivity
Frequency Sensitivity
(SYSCLK Low Time)
(SYSCLK High Time)
Electrical Characteristics
Parameter
1
2
3, 5, 6
1,6,7
Two-Cell Mode
One-Cell Mode
Two-Cell Mode
VDD (not in Sleep Mode)
VBAT (in Sleep Mode)
V
(includes precision oscillator current)
V
(includes low power oscillator current)
V
V
(includes external oscillator/GPIO current)
V
(includes SmaRTClock oscillator current)
V
(Flash oneshot active, see Section 13.6)
V
(Flash oneshot bypassed, see Section 13.6)
V
(includes precision oscillator current)
V
(includes low power oscillator current)
V
V
(includes external oscillator/GPIO current)
V
SmaRTClock oscillator current)
V
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= 1.8–3.6 V, F = 24.5 MHz
= 1.8–3.6 V, F = 20 MHz
= 1.8 V, F = 1 MHz
= 3.6 V, F = 1 MHz
= 1.8–3.6 V, F = 32.768 kHz
= 1.8–3.6 V, T = 25
= 1.8–3.6 V, T = 25
= 1.8–3.6 V, F = 24.5 MHz
= 1.8–3.6 V, F = 20 MHz
= 1.8 V, F = 1 MHz
= 3.6 V, F = 1 MHz
= 1.8–3.6 V, F = 32.768 kHz (includes
= 1.8–3.6 V, T = 25
Conditions
Rev. 1.1
°
°
°
C, F < 10 MHz
C, F > 10 MHz
C
Min
–40
0.9
1.8
1.8
1.8
18
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
Typ
295
365
226
120
165
235
1.2
2.4
1.9
2.4
1.4
0.3
4.1
3.5
2.5
1.8
90
84
95
—
—
—
—
Max
+85
1.8
3.6
3.6
3.6
0.5
5.0
3.0
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
µA/MHz
µA/MHz
µA/MHz
Units
MHz
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
ns
ns
°C
V
V
V
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