MC9S12P32CFT Freescale Semiconductor, MC9S12P32CFT Datasheet - Page 425

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MC9S12P32CFT

Manufacturer Part Number
MC9S12P32CFT
Description
MCU 16BIT 32K FLASH 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12P32CFT

Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN Exposed Pad
Processor Series
S12P
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, DEMO9S12PFAME
Package
48QFN EP
Family Name
HCS12
Maximum Speed
32 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Interface Type
CAN/SCI/SPI
On-chip Adc
10-chx12-bit
Number Of Timers
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Chapter 13
128 KByte Flash Module (S12FTMRC128K1V1)
13.1
The
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
Freescale Semiconductor
Revision
Number
V01.09
V01.10
V01.11
FTMRC128K1
128
4
Kbytes of D-Flash (Data Flash) memory
Introduction
Kbytes of P-Flash (Program Flash) memory
19 Dec 2008
25 Sep 2009
28 Jul 2008
Revision
Date
module implements the following:
13.4.5.4/13-457
13.4.5.6/13-459
13.3.2.1/13-433
13.4.3.2/13-451
13.1.1/13-426
13.3.1/13-429
13.5.2/13-471
13.3.2/13-432
13.4.5.11/13-
13.4.5.11/13-
13.4.5.11/13-
13.1/13-425
13.6/13-472
Sections
Affected
463
463
463
S12P-Family Reference Manual, Rev. 1.13
Table 13-1. Revision History
- Remove reference to IFRON in Program IFR definition
- Remove reference to IFRON in
- Clarify single bit fault correction for P-Flash phrase
- Add statement concerning code runaway when executing Read Once,
Program Once, and Verify Backdoor Access Key commands from Flash block
containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset”
- Reformat section on unsecuring MCU using BDM
-The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
Description of Changes
Table 13-4
and
Figure 13-3
425

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