MC9S12P32CFT Freescale Semiconductor, MC9S12P32CFT Datasheet - Page 522

• Manufacturer Part Number: MC9S12P32CFT
• Description: MCU 16BIT 32K FLASH 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12P32CFT

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN Exposed Pad
• Processor Series: S12P
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, DEMO9S12PFAME
• Package: 48QFN EP
• Family Name: HCS12
• Maximum Speed: 32 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Interface Type: CAN/SCI/SPI
• On-chip Adc: 10-chx12-bit
• Number Of Timers: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
The D-Flash sector erase time is ~5ms on a new device and can extend to ~20ms as the flash is cycled.
1. Typical program and erase times are based on typical f
2. Maximum program and erase times are based on minimum f
3. t
4. Typical value for a new device
A.3.2
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
522
Num C
12a
12b
12c
12d
12e
10
11
1
2
3
4
5
6
7
8
9
cyc
= 1 / f
D Erase all blocks (mass erase) time
D Erase verify all blocks (blank check) time
D Unsecure Flash time
D P-Flash block erase time
D P-Flash erase verify (blank check) time
D P-Flash sector erase time
D P-Flash phrase programming time
D D-Flash sector erase time
D D-Flash erase verify (blank check) time
D D-Flash one word programming time
D D-Flash two word programming time
D D-Flash three word programming time
D D-Flash four word programming time
D D-Flash four word programming time crossing row
Bus frequency
Operating frequency
boundary
NVMBUS
NVM Reliability Parameters
Table A-18. NVM Timing Characteristics (FTMRC)
Rating
S12P-Family Reference Manual, Rev. 1.13
NVMOP
NVMOP
and maximum f
and maximum f
f
Symbol
NVMBUS
f
t
t
t
NVMOP
t
t
t
t
t
dpgm4c
t
t
t
pcheck
dcheck
dpgm1
dpgm2
dpgm3
dpgm4
pmass
t
t
check
mass
ppgm
t
pera
dera
uns
NVMBUS
Min
NVMBUS
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Typ
100
100
100
226
100
170
241
311
328
5
1.0
20
—
—
—
—
(4)
(1)
Freescale Semiconductor
Max
35500
33500
2800
1.05
130
130
130
285
107
185
262
339
357
32
26
26
(2)
Unit
MHz
MHz
t
t
t
ms
ms
ms
ms
ms
µs
µs
µs
µs
µs
µs
cyc
cyc
cyc
(3)