MC9S12P32CFT Freescale Semiconductor, MC9S12P32CFT Datasheet - Page 451

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MC9S12P32CFT

Manufacturer Part Number
MC9S12P32CFT
Description
MCU 16BIT 32K FLASH 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12P32CFT

Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN Exposed Pad
Processor Series
S12P
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, DEMO9S12PFAME
Package
48QFN EP
Family Name
HCS12
Maximum Speed
32 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Interface Type
CAN/SCI/SPI
On-chip Adc
10-chx12-bit
Number Of Timers
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
13.4.3.1
Prior to issuing any Flash program or erase command after a reset, the user is required to write the
FCLKDIV register to divide BUSCLK down to a target FCLK of 1 MHz.
values for the FDIV field based on BUSCLK frequency.
When the FCLKDIV register is written, the FDIVLD bit is set automatically. If the FDIVLD bit is 0, the
FCLKDIV register has not been written since the last reset. If the FCLKDIV register has not been written,
any Flash program or erase command loaded during a command write sequence will not execute and the
ACCERR bit in the FSTAT register will set.
13.4.3.2
The Memory Controller will launch all valid Flash commands entered using a command write sequence.
Before launching a command, the ACCERR and FPVIOL bits in the FSTAT register must be clear (see
Section
sequence. If CCIF is 0, the previous command write sequence is still active, a new command write
sequence cannot be started, and all writes to the FCCOB register are ignored.
13.4.3.2.1
The FCCOB parameter fields must be loaded with all required parameters for the Flash command being
executed. Access to the FCCOB parameter fields is controlled via the CCOBIX bits in the FCCOBIX
register (see
The contents of the FCCOB parameter fields are transferred to the Memory Controller when the user clears
the CCIF command completion flag in the FSTAT register (writing 1 clears the CCIF to 0). The CCIF flag
will remain clear until the Flash command has completed. Upon completion, the Memory Controller will
return CCIF to 1 and the FCCOB register will be used to communicate any results. The flow for a generic
command write sequence is shown in
Freescale Semiconductor
How to write the FCLKDIV register that is used to generate a time base (FCLK) derived from
BUSCLK for Flash program and erase command operations
The command write sequence used to set Flash command parameters and launch execution
Valid Flash commands available for execution
13.3.2.7) and the CCIF flag should be tested to determine the status of the current command write
Section
Writing the FCLKDIV Register
Command Write Sequence
Programming or erasing the Flash memory cannot be performed if the bus
clock runs at less than 0.8 MHz. Setting FDIV too high can destroy the Flash
memory due to overstress. Setting FDIV too low can result in incomplete
programming or erasure of the Flash memory cells.
Writes to any Flash register must be avoided while a Flash command is
active (CCIF=0) to prevent corruption of Flash register contents and
Memory Controller behavior.
Define FCCOB Contents
13.3.2.3).
S12P-Family Reference Manual, Rev. 1.13
Figure
13-26.
CAUTION
NOTE
128 KByte Flash Module (S12FTMRC128K1V1)
Table 13-7
shows recommended
451

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