MC9S12P32CFT Freescale Semiconductor, MC9S12P32CFT Datasheet - Page 508

• Manufacturer Part Number: MC9S12P32CFT
• Description: MCU 16BIT 32K FLASH 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12P32CFT

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN Exposed Pad
• Processor Series: S12P
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, DEMO9S12PFAME
• Package: 48QFN EP
• Family Name: HCS12
• Maximum Speed: 32 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Interface Type: CAN/SCI/SPI
• On-chip Adc: 10-chx12-bit
• Number Of Timers: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
A.1.9
This section describes the characteristics of all I/O pins except EXTAL, XTAL, TEST and supply pins.
1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
2. Refer to
3. Parameter only applies in stop or pseudo stop mode.
508
Conditions are 3.15 V < V
I/O Characteristics for all I/O pins except EXTAL, XTAL,TEST and supply pins.
Num C
10
11
12
13
14
15
16
17
8°C to 12 C ° in the temperature range from 50°C to 125°C.
1
2
3
4
5
6
7
8
9
ALL 3.3V RANGE I/O PARAMETERS ARE SUBJECT TO CHANGE FOLLOWING CHARACTERIZATION
P Input high voltage
P Input low voltage
C Input hysteresis
P
C
C
C Output high voltage (pins in output mode)
P Output high voltage (pins in output mode)
C Output low voltage (pins in output mode)
P Output low voltage (pins in output mode)
P Internal pull up resistance
P Internal pull down resistance
D Input capacitance
P Port J, P interrupt input pulse filtered (STOP)
P Port J, P interrupt input pulse passed (STOP)
D Port J, P interrupt input pulse filtered (STOP)
D Port J, P interrupt input pulse passed (STOP)
D IRQ pulse width, edge-sensitive mode (STOP)
T Input high voltage
T Input low voltage
T Injection current
Section A.1.4, “Current Injection”
Input leakage current (pins in high impedance input
mode)
M temperature range –40°C to +150°C
V temperature range –40°C to +125°C
C temperature range –40°C to +105°C
V
V
IH
IH
I/O Characteristics
Partial drive I OH = –0.75 mA
Full drive I
Partial Drive I
Full Drive I OL = +4.75 mA
Single pin limit
Total device limit, sum of all injected currents
min > input voltage > V
min > input voltage > V
(1)
V in = V DD35 or V SS35
OH
DD35
(2)
OL
= –4 mA
= +0.9 mA
< 3.6 V junction temperature from –40°C to +150°C, unless otherwise noted
Rating
IL
IL
max
max
S12P-Family Reference Manual, Rev. 1.13
Table A-6. 3.3-V I/O Characteristics
for more details
(3)
3
Symbol
PW
t
t
t
t
V
R
PULSE
PULSE
PULSE
PULSE
R
V
V
V
V
I
I
V
V
V
V
C
ICS
ICP
HYS
I
PDH
PUL
OH
OH
OL
OL
in
IH
IH
IL
IL
in
IRQ
V
V
V
0.65*V
DD35
DD35
SS35
–1.00
-0.75
-0.50
–2.5
Min
–25
25
25
10
—
—
—
—
—
—
—
4
1
– 0.3
– 0.4
– 0.4
DD35
Typ
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Freescale Semiconductor
V
0.35*V
DD35
Max
1.00
0.75
0.50
0.4
0.4
2.5
50
50
25
—
—
—
—
—
—
—
—
3
3
+ 0.3
DD35
Unit
tcyc
tcyc
tcyc
mV
mA
KΩ
KΩ
µA
pF
µs
µs
V
V
V
V
V
V
V
V