s3c4510b Samsung Semiconductor, Inc., s3c4510b Datasheet - Page 394

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s3c4510b

Manufacturer Part Number
s3c4510b
Description
16/32-bit Risc Microcontroller
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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ELECTRICAL DATA
D.C. ELECTRICAL CHARACTERISTICS
V
NOTES:
1.
2.
14-2
High level input voltage
Low level input voltage
Switching threshold
Schmitt trigger positive-going threshold
Schmitt trigger negative-going
threshold
High level input current
Low level input current
High level output voltage Type B1 to
Low level output voltage
Tri-state output leakage current
Maximum operating current
DD
All 5 V-tolerant inputs have less than 0.2 V hysterics.
Type B1 means 1 mA output driver cells, and Type B6/B24 means 6 mA/24 mA output driver cells.
= 3.3 V 0.3 V, V
Parameter
EXT
= 5 0.25 V, T
LVCMOS
interface
LVCMOS
interface
Input buffer
Input buffer
with pull-up
Input buffer
Input buffer
with pull-
down
B16
Type B1
Type B2
Type B4
Type B6
Type B1 to
B16
Type B1
Type B2
Type B4
Type B6
(2)
(2)
Table 14-3. D.C Electrical Characteristics
A
= 0 to 70 C (in case of 5 V-tolerant I/O)
Symbol
V
V
VT+
VT–
V
V
I
I
IH
VT
IL
I
I
DD
OZ
OH
IH
IL
OL
(1)
(1)
V
V
V
f
MCLK
I
I
I
I
I
OUT
DD
DD
Conditions
OH
OH
OH
OH
OH
I
I
I
I
I
V
V
OL
OL
OL
OL
LVCMOS
LVCMOS
LVCMOS
OL
IN
IN
= 3.6 V
= – 1 mA
= – 2 mA
= – 4 mA
= – 6 mA
= – 1 A
= 1 mA
= 2 mA
= 4 mA
= 6 mA
= V
= 1 A
= 50MHz
= V
= V
SS
DD
SS
,
or
V
– 10
– 10
– 60
0.05
– 10
Min
2.0
0.8
2.4
DD
10
– 30
Typ
1.4
30
Max
– 10
0.05
230
0.8
2.0
0.4
10
60
10
10
S3C4510B
Unit
mA
V
V
V
V
V
A
A
A

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