DF2218BR24V Renesas Electronics America, DF2218BR24V Datasheet - Page 739

• Manufacturer Part Number: DF2218BR24V
• Description: IC H8S/2218 MCU FLASH 112-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2218BR24V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 24MHz
• Connectivity: SCI, SmartCard, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 6x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-LFBGA
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2218-SS - KIT DEV H8S/2218 WINDOWS SIDESHW3DK2218 - DEV EVAL KIT H8S/2218
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

22.7
Table 22.10 lists the flash memory characteristics.
Table 22.10 Flash Memory Characteristics
Conditions: V
Item
Programming time*
Erase time*
Reprogramming count
Data retention time*
Programming Wait time after PSU1 bit setting*
Common
Erase
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
Flash Memory Characteristics
1
*
erase/erase-verify flowchart.
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
3
V
T
*
Wait time after P1 bit setting*
Wait time after P1 bit clear*
Wait time after PSU1 bit clear*
Wait time after PV1 bit setting*
Wait time after H’FF dummy write*
Wait time after PV1 bit clear*
Maximum programming count*
Wait time after SWE1 bit setting*
Wait time after SWE1 bit clear*
Wait time after ESU1 bit setting*
Wait time after E1 bit setting*
Wait time after E1 bit clear*
Wait time after ESU1 bit clear*
Wait time after EV1 bit setting*
Wait time after H'FF dummy write*
Wait time after EV1 bit clear*
Maximum erase count*
5
a
CC
SS
= –20 to +75°C (Programming/erasing operating temperature range)
1
= PLLV
8
= PLLV
*
2
*
4
SS
CC
= DrV
= DrV
1
SS
CC
*
5
= 0 V,
= 3.0 V to 3.6 V, Vref = 2.7 V to V
1
1
1
1
1
1
*
*
1
1
1
1
1
1
4
5
*
1
1
1
4
1
1
Symbol
t
t
N
t
y
z0
z1
z2
α
β
γ
ε
η
N1
N2
x
θ
y
z
α
β
γ
ε
η
N
P
E
DRP
WEC
Rev.7.00 Dec. 24, 2008 Page 683 of 698
Min.
—
—
100*
10
50
28
198
8
5
5
4
2
2
—
—
1
100
100
10
10
10
20
2
4
—
6
Typ.
10
50
10000*
—
50
30
200
10
5
5
4
2
2
—
—
1
100
100
10
10
10
20
2
4
—
7
CC
,
Max.
200
1000
—
—
—
32
202
12
—
—
—
—
—
6*
994*
—
—
—
100
—
—
—
—
—
100
4
REJ09B0074-0700
4
Unit
ms/128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Times
µs
µs
µs
ms
µs
µs
µs
µs
µs
Times