YLCDRSK2378 Renesas Electronics America, YLCDRSK2378 Datasheet - Page 921

• Manufacturer Part Number: YLCDRSK2378
• Description: KIT DEV EVAL H8S/2378 LCD
• Manufacturer: Renesas Electronics America
• Series: H8®r

Specifications of YLCDRSK2378

• Main Purpose: Displays, LCD Controller
• Embedded: Yes, MCU, 16-Bit
• Utilized Ic / Part: YLCDRSK2378
• Primary Attributes: 5.7" QVGA, Touch Screen
• Secondary Attributes: Source Code on CD, Debugging Requires Emulator Cable E10A USB/JTAG
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1. Prewriting (setting erase block data to all 0) is not necessary.
2. The values of x, y, z, α, β, γ, ε, η, θ, and N are shown in section 26.1.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (W) units.
4. Set only one bit in EBR1 or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Increment
address
NG
NG
Figure 20.8 Erase/Erase-Verify Flowchart
Set block start address to verify address
H'FF dummy write to verify address
*5
Clear ESU bit in FLMCR1
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR1
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (α) μs
Wait (η) μs
Wait (x) μs
Wait (y) μs
Wait (z) μs
Wait (β) μs
Wait (ε) μs
Wait (θ) μs
Wait (γ) μs
blocks?
End of
n = 1
Start
OK
OK
OK
*1
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
*2
NG
*2
*2
*4
*2
Start of erase
*2
Halt erase
*2
*2
*2
*2
*3
Rev.7.00 Mar. 18, 2009 page 853 of 1136
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait (η) μs
Wait (θ) μs
n ≥ N?
OK
*2
REJ09B0109-0700
NG
*2
n ← n + 1
*2