S912XET512J3VALR Freescale Semiconductor, S912XET512J3VALR Datasheet - Page 1232

• Manufacturer Part Number: S912XET512J3VALR
• Description: 16-bit Microcontrollers - MCU 16 BIT,512K FLASH
• Manufacturer: Freescale Semiconductor

Specifications of S912XET512J3VALR

• Rohs: yes
• Core: HCS12X
• Processor Series: MC9S12XE
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 512 KB
• Data Ram Size: 32 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 3.13 V to 5.5 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: LQFP-112
• Mounting Style: SMD/SMT

Appendix A Electrical Characteristics
The standard shipping condition for both the D-Flash and P-Flash memory is erased with security disabled.
However it is recommended that each block or sector is erased before factory programming to ensure that
the full data retention capability is achieved. Data retention time is measured from the last erase operation.
1232
1. T
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
3. T
4. This represents the number of writes of updated data words to the EEE_RAM partition. Minimum specification (endurance
Conditions are shown in
Num C
10
11
12
13
application.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618
application.
and data retention) of the Emulated EEPROM array is based on the minimum specification of the D-Flash array per item 6.
1
2
3
4
5
6
7
8
9
Javg
Javg
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
C Data retention at an average junction temperature of T
C Data retention at an average junction temperature of T
C P-Flash number of program/erase cycles
C Data retention at an average junction temperature of T
C Data retention at an average junction temperature of T
C Data retention at an average junction temperature of T
C D-Flash number of program/erase cycles (-40°C ≤ tj ≤ 150°C)
C Data retention at an average junction temperature of T
C Data retention at an average junction temperature of T
C Data retention at an average junction temperature of T
C EEPROM number of program/erase cycles with a ratio of
C EEPROM number of program/erase cycles with a ratio of
C EEPROM number of program/erase cycles with a ratio of
85°C
85°C
(-40°C ≤ tj ≤ 150°C)
85°C
85°C
85°C
85°C
85°C
(e.g. after <20,000 cycles / Spec 100,000 cycles)
85°C
(e.g. after < 200 cycles / Spec 100,000 cycles)
EEE_NVM to EEE_RAM = 8 (-40°C ≤ tj ≤ 150°C)
EEE_NVM to EEE_RAM = 128 (-40°C ≤ tj ≤ 150°C)
EEE_NVM to EEE_RAM = 16384
(1)
(3)
3
3
3
1
3
3
after spec. program/erase cycles
after up to 50,000 program/erase cycles
after less than 10,000 program/erase cycles
after less than 100 program/erase cycles
after less than 20% spec.program/erase cycles.
after less than 0.2% spec. program/erase cycles
after up to 10,000 program/erase cycles
after less than 100 program/erase cycles
Table A-4
unless otherwise noted
Table A-20. NVM Reliability Characteristics
MC9S12XE-Family Reference Manual Rev. 1.25
Rating
(6)
(-40°C ≤ tj ≤ 150°C)
Emulated EEPROM
P-Flash Arrays
D-Flash Array
Javg
Javg
Javg
Javg
Javg
Javg
Javg
Javg
=
=
=
=
=
=
=
=
t
t
t
t
t
t
t
t
EENVMRET
EENVMRET
EENVMRET
Symbol
PNVMRET
PNVMRET
DNVMRET
DNVMRET
DNVMRET
n
n
n
n
n
PFLPE
DFLPE
EEPE
EEPE
EEPE
100K
325M
3M
Min
10K
50K
15
20
10
20
10
20
5
5
4
4
(4)
4
100K
500K
100
3.2G
1M
30M
100
100
100
100
100
100
100
Typ
Freescale Semiconductor
(5)
(2)
2
2
2
2
2
2
2
5
5
3
3
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
Cycles
Cycles
Cycles
Cycles
Cycles
Years
Years
Years
Years
Years
Years
Years
Years
Unit