S912XET512J3VALR Freescale Semiconductor, S912XET512J3VALR Datasheet - Page 988

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S912XET512J3VALR

Manufacturer Part Number
S912XET512J3VALR
Description
16-bit Microcontrollers - MCU 16 BIT,512K FLASH
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S912XET512J3VALR

Rohs
yes
Core
HCS12X
Processor Series
MC9S12XE
Data Bus Width
16 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
512 KB
Data Ram Size
32 KB
On-chip Adc
Yes
Operating Supply Voltage
3.13 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-112
Mounting Style
SMD/SMT

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Quantity
Price
Part Number:
S912XET512J3VALR
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Chapter 26 384 KByte Flash Module (S12XFTM384K2V1)
26.4.1.4
Table 26-31
Flash block and other resources within the Flash module.
26.4.1.5
Table 26-32
on the D-Flash block and EEE operation.
988
FCMD
FCMD
0x0C
0x0D
0x0A
0x0B
0x0E
0x01
0x02
0x03
0x04
0x05
0x06
0x07
0x08
0x09
0x01
0x02
Erase Verify Block
Erase Verify Block
Program P-Flash
summarizes the valid P-Flash commands along with the effects of the commands on the P-
summarizes the valid D-Flash and EEE commands along with the effects of the commands
Erase All Blocks
Set User Margin
Set Field Margin
Load Data Field
Unsecure Flash
Verify Backdoor
Erase Verify All
Erase Verify All
P-Flash Commands
Erase Verify P-
D-Flash and EEE Commands
Program Once
Erase P-Flash
Erase P-Flash
Flash Section
Access Key
Read Once
Command
Command
Blocks
Sector
Blocks
Block
Level
Level
Verify that all D-Flash (and P-Flash) blocks are erased.
Verify that the D-Flash block is erased.
Verify that all P-Flash (and D-Flash) blocks are erased.
Verify that a P-Flash block is erased.
Verify that a given number of words starting at the address provided are erased.
Read a dedicated 64 byte field in the nonvolatile information register in P-Flash block 0
that was previously programmed using the Program Once command.
Load data for simultaneous multiple P-Flash block operations.
Program a phrase in a P-Flash block and any previously loaded phrases for any other P-
Flash block (see Load Data Field command).
Program a dedicated 64 byte field in the nonvolatile information register in P-Flash block
0 that is allowed to be programmed only once.
Erase all P-Flash (and D-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the EPDIS and EPOPEN bits in the EPROT register are
set prior to launching the command.
Erase a single P-Flash block.
An erase of the full P-Flash block is only possible when FPLDIS, FPHDIS and FPOPEN
bits in the FPROT register are set prior to launching the command.
Erase all bytes in a P-Flash sector.
Supports a method of releasing MCU security by erasing all P-Flash (and D-Flash) blocks
and verifying that all P-Flash (and D-Flash) blocks are erased.
Supports a method of releasing MCU security by verifying a set of security keys.
Specifies a user margin read level for all P-Flash blocks.
Specifies a field margin read level for all P-Flash blocks (special modes only).
MC9S12XE-Family Reference Manual Rev. 1.25
Table 26-31. P-Flash Commands
Table 26-32. D-Flash Commands
Function on D-Flash Memory
Function on P-Flash Memory
Freescale Semiconductor

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