MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet

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MT29F128G08WAAC6

Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
NAND Flash Memory
MT29F16G08MAAWP, MT29F32G08QAAWP, MT29F64G08TAAWP,
MT29F16G08MAAC3, MT29F32G08RAAC3, MT29F64G08UAAC4,
MT29F32G08RAAC6, MT29F64G08UAAC6, MT29F128G08WAAC6
Features
• Open NAND Flash Interface (ONFI) 1.0 compliant
• Multilevel cell (MLC) technology
• Organization
• READ performance
• WRITE performance
• Endurance
• Data retention: 10 years
• First block (block address 00h) guaranteed to be
• Industry-standard basic NAND Flash command set
• Advanced command set
• Operation status byte provides a software method of
• Ready/busy# (R/B#) signal provides a hardware
• WP# signal: entire device hardware write protect
• RESET required after power-up
• INTERNAL DATA MOVE operations supported
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__1.fm -Rev. D 5/08 EN
– Page size: x8: 4,314 bytes (4,096 + 218 bytes)
– Block size:128 pages (512K + 27K bytes)
– Plane size: 2,048 blocks
– Device size: 16Gb: 4,096 blocks; 32Gb: 8,192
– Random READ: 50µs
– Sequential READ: 25ns
– PROGRAM PAGE: 900µs (TYP)
– BLOCK ERASE: 3.5ms (TYP)
– 10,000 PROGRAM/ERASE cycles (8-bit ECC
– PROGRAM PAGE CACHE MODE
– PAGE READ CACHE MODE
– One-time programmable (OTP) commands
– Two-plane commands
– Interleaved die operations
– READ UNIQUE ID (contact factory)
– Operation completion
– Pass/fail condition
– Write-protect status
valid when shipped from factory
detecting:
method of detecting PROGRAM or ERASE cycle
completion
within the plane from which data is read
blocks; 64Gb: 16,384 blocks; 128Gb: 32,768 blocks
Products and specifications discussed herein are subject to change by Micron without notice.
1
Micron Confidential and Proprietary
1
)
1
www.DataSheet.net/
Figure 1:
Notes: 1. For details, see “Error Management” on
Options
• Density
• Device width: x8
• Configuration:
• V
• Package: 48 TSOP type I (lead-free plating)
• Operating temperature:
• Commercial temperature (0°C to 70°C)
– Extended temperature (–40°C to +85°C)
TSOP/LGA
CC
16, 32, 64, 128Gb NAND Flash Memory
Package
– 52-pad ULGA
– 52-pad VLGA
– 52-pad LLGA
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TSOP
TSOP
LGA
LGA
LGA
: 2.7–3.6V
2. For part numbering and markings, see
page 88.
Figure 2 on page 2.
48-Pin TSOP Type 1
# of die # of CE# # of R/B#
1
2
4
2
4
8
1
2
2
2
2
4
©2005 Micron Technology, Inc. All rights reserved.
1
2
2
2
2
4
Features
Common
Common
Common
Separate
Separate
Separate
I/O
Datasheet pdf - http://www.DataSheet4U.co.kr/

Related parts for MT29F128G08WAAC6

MT29F128G08WAAC6 Summary of contents

Page 1

... NAND Flash Memory MT29F16G08MAAWP, MT29F32G08QAAWP, MT29F64G08TAAWP, MT29F16G08MAAC3, MT29F32G08RAAC3, MT29F64G08UAAC4, MT29F32G08RAAC6, MT29F64G08UAAC6, MT29F128G08WAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Multilevel cell (MLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes) – Block size:128 pages (512K + 27K bytes) – ...

Page 2

... A = 3.3V (2.7–3.6V) Valid Part Number Combinations After building the part number from the part numbering chart, verify that the part number is offered and valid by using the Micron Parametric Part Search Web site at www.micron.com/products/parametric. If the device required is not on this list, contact the factory. ...

Page 3

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52aTOC.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 Table of Contents ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 4

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52aTOC.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 Table of Contents ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 5

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52aLOF.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 List of Figures ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 6

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52aLOF.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 List of Figures ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 7

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52aLOT.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 List of Tables ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 8

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory t BERS. On-chip control logic automates PROGRAM and ERASE operations to www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 General Description t PROG, and an entire block can be ©2005 Micron Technology, Inc. All rights reserved. ...

Page 9

... V pins are for compatibility with ONFI 1.0. If not supplying Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 General Description DNU/Vss I/O7 43 I/O6 42 I/ ...

Page 10

... G I/O0-2 I/O0 H I/O1 www.DataSheet.net I/O1-2 I/O2 DNU I/ I/O2 DNU I/O3 Top View, Pads Down Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 General Description CE CE2# RE# 1 RE2# DNU 1 R/B# R/B2 WP2# I/O7-2 I/O7 1 I/O6 I/O6-2 ...

Page 11

... WE2# WE# F WP# G I/O0-2 I/O0 H I/O1 www.DataSheet.net/ J I/O1-2 I/O2 DNU I/O3 L I/O2 DNU/ N I/O3 Top View, Pads Down Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 General Description R/B4 CE# R/B3 CE2# RE# RE2# DNU R/B# R/B2 WP2# I/O7-2 I/O7 I/O6 I/O6-2 DNU I/O5 I/O4 I/O5-2 ...

Page 12

... SS No connect: NCs are not internally connected. They can be driven or left unconnected. Do not use: DNUs must be left disconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 General Description ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 13

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Address register www.DataSheet.net/ Status register Command register Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 Architecture Column decode NAND Flash ...

Page 14

... Max Address in Page www.DataSheet.net/ 0x00000010D9 0x00000110D9 0x00000210D9 … 0x07FFFE10D9 0x07FFFF10D9 Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Memory Mapping 4,095 4,095 4,313 • • • Spare area Out of Bounds Addresses in Page 0x00000010DA– ...

Page 15

... I/O5 I/O4 I/O3 CA5 CA4 CA3 LOW CA12 CA11 PA5 PA4 PA3 BA13 BA12 BA11 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Array Organization I/O7 I/O0 = (512K + 27K) bytes = 8,624Mb = 17,248Mb I/O2 I/O1 I/O0 CA2 CA1 CA0 CA10 CA9 CA8 PA2 PA1 ...

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... CA11 PA5 PA4 PA3 BA13 BA12 BA11 LOW LOW BA19 Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Array Organization I/O7 218 I/O0 218 1 page = (4K + 218 bytes) 1 block = (4K + 218) bytes x 128 pages = (512K + 27K) bytes 1 plane = (512K + 27K) bytes x 2,048 blocks ...

Page 17

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 Bus Operation ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 18

... R and transitions HIGH after the transfer is complete. When www.DataSheet.net less than 30ns, use Figure 74 on page 97 for extended data output Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 Bus Operation t RC, use Figure 73 on page 97 for © ...

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... www.DataSheet.net/ is the sum of the input currents of all devices tied to the R/B# pin R/B# Open drain output I OL Device Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 Bus Operation ) 3.2 V -------------------------- - = Σ ©2005 Micron Technology, Inc. All rights reserved. ...

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... 3.60V (MAX 10k I at 3.60V (max 100pF Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 Bus Operation 6 Vcc 3.3 12000 12k ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

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... 0V www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Bus Operation Mode Read mode Command input Address input Write mode Command input Address input Data input Sequential read and data output During read (busy) ...

Page 22

... No FFh – No A0h 5 Yes A5h 5 No AFh 5 No www.DataSheet.net/ EFh 1 4 EEh 1 No Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 Command Definitions Valid Command During 1 Cycle 2 Busy Notes 30h No 2 – 31h No 4 – No 35h ...

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... E0h 78h 3 – 80h 5 11h-80h 80h 5 11h-80h 85h 5 11h-85h 60h 3 D1h-60h www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 Command Definitions Number of Valid Address Command During Cycles Cycle 3 Busy Notes 5 30h No 5 35h No – – ...

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... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory t R), monitor the R/B# signal; or alternately, issue a READ STATUS (70h) com- www.DataSheet.net 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 Command Definitions t RC rate t R Data output (Serial access) Don’ ...

Page 25

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Address Data output 05h (2 cycles) www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 25 Command Definitions Data output E0h ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 26

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory WHR t REA 1 Byte 0 Byte 1 Byte 2 www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 26 Command Definitions Byte 3 Byte 4 ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 27

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 Command Definitions 1 I/O2 I/O1 I/O0 Value Notes 2Ch D5h D5h D7h D7h ...

Page 28

... 00h Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 Command Definitions I/O2 I/O1 I/O0 Value 4Fh 4Eh 46h 49h XXh … ...

Page 29

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Device MT29F16G08MAA MT29F32G08QAA MT29F32G08RAA MT29F64G08TAA MT29F64G08UAA MT29F128G08WAA www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 Command Definitions Values – 4Fh, 4Eh, 46h, 49h – 02h, 00h 18h, 00h 18h, 00h ...

Page 30

... MT29F16G08MAA MT29F32G08QAA MT29F32G08RAA MT29F64G08TAA MT29F64G08UAA MT29F128G08WAA Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 Command Definitions Values 4Dh, 54h, 32h, 39h, 46h, 31h, 36h, 47h, 30h, 38h, 4Dh, 41h, 41h, 20h, 20h, 20h, 20h, 20h, 20h, 20h ...

Page 31

... D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Device MT29F16G08MAA MT29F32G08QAA MT29F32G08RAA MT29F64G08TAA www.DataSheet.net/ MT29F64G08UAA MT29F128G08WAA Micron Technology, Inc., reserves the right to change products or specifications without notice. 31 Command Definitions Values – 01h – 00h – 08h – ...

Page 32

... Bit[3:0] = Number of OTP pages 179–253 PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Device www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 32 Command Definitions Values – 01h – 01h – ...

Page 33

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Device MT29F16G08MAA MT29F32G08QAA MT29F32G08RAA MT29F64G08TAA MT29F64G08UAA MT29F128G08WAA www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 33 Command Definitions Values 17h, 7Ah D1h, 63h 46h, F4h 51h, 12h DFh, E0h 4Ch, EFh – ...

Page 34

... Ready/busy Ready/busy Ready/busy Ready/busy Ready/busy Ready/busy 3 cache Write protect Write protect Write protect 0 = Protected Micron Technology, Inc., reserves the right to change products or specifications without notice. 34 Command Definitions Definition 0 = Successful PROGRAM/ERASE 1 = Error in PROGRAM/ERASE – Successful PROGRAM 1 = Error in PROGRAM – 0 – 0 – ...

Page 35

... RE# I/Ox PAGE READ CACHE MODE Operations Micron NAND Flash devices have a cache register that can be used to increase READ operation speed. Data can be output from the device's cache register while concurrently moving a page from the NAND Flash array to the data register. To begin a PAGE READ CACHE MODE sequence, begin by reading a page from the NAND Flash array to the cache register using the PAGE READ (00h-30h) command (see “ ...

Page 36

... DCBSYR2, R/B# goes HIGH and status reg- www.DataSheet.net DCBSYR2. After DCBSYR1 or DCBSYR2, R/B# goes HIGH and status reg- Micron Technology, Inc., reserves the right to change products or specifications without notice. 36 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 37

... Sequential PAGE READ CACHE MODE operation www.DataSheet.net/ t DCBSYR2 t DCBSYR2 31h Data output 3Fh Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 Command Definitions Data output 1 Data output ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 38

... D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ t PROG Address (5 cycles) D 10h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. 38 Command Definitions t PROG. The READ STATUS 1 70h Status I PROGRAM successful I PROGRAM error © ...

Page 39

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory D 85h Address (5 cycles) Address (2 cycles) IN www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 39 Command Definitions t PROG 1 D 10h 70h Status IN ©2005 Micron Technology, Inc. All rights reserved. ...

Page 40

... A: Without status reads t PROG Status Address & 80h 10h 70h 2 output data input B: With status reads www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 40 Command Definitions t CBSY t LPROG 1 Address & 15h 80h 10h data input Status 2 output © ...

Page 41

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 41 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 42

... NAND Flash Memory Address Data output 05h E0h Data output (2 cycles) Unlimited number of repetitions Optional www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 42 Command Definitions t PROG 1 85h Address (5 cycles) 10h 70h Status ©2005 Micron Technology, Inc. All rights reserved. ...

Page 43

Figure 25: INTERNAL DATA MOVE with Optional Data Output and RANDOM DATA Input t R R/B# I/Ox 00h Address (5 cycles) 35h (or 30h) Notes: 1. Command can be 70h or 78h. Data output 85h Address (5 cycles) 85h Unlimited ...

Page 44

... Notes: 1. Command can be 70h or 78h. PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ t BERS D0h Micron Technology, Inc., reserves the right to change products or specifications without notice. 44 Command Definitions t BERS erase 1 70h Status ...

Page 45

... OTP commands. Customers can use the OTP area in any way they desire; typical uses include programming serial numbers or other data for permanent storage. In Micron NAND Flash devices, the OTP area leaves the factory in a non-written state (all bits are “1s”). Programming enables the user to program only “0” bits in the OTP area. ...

Page 46

... OTP IN IN 00h 00h 1 page bytes serial input x8 device 4,314 bytes www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 46 Command Definitions PROG 10h 70h Status PROGRAM READ STATUS command command OTP data written (following " ...

Page 47

Figure 28: OTP PROGRAM with RANDOM DATA INPUT CLE CE WE# ALE RE# OTP Col Col I/Ox A0h 00h 1 add 1 add 2 page OTP DATA INPUT command R/B# Notes: 1. The OTP page must be within ...

Page 48

... NAND Flash Memory t OBSY. www.DataSheet.net 01h 00h 00h 10h PROGRAM command Micron Technology, Inc., reserves the right to change products or specifications without notice. 48 Command Definitions t PROG 70h Status READ STATUS command 1 OTP data protected Don’t Care ©2005 Micron Technology, Inc. All rights reserved. ...

Page 49

... NAND Flash Memory t R) while the data is moved from the OTP page to the data register. The www.DataSheet.net OTP 00h 00h 30h 1 page Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. 49 Command Definitions OUT OUT OUT Don’ ...

Page 50

Figure 31: OTP DATA READ with RANDOM DATA READ CLE CE# WE# ALE RE# Col Col OTP I/Ox AFh 00h 1 add 1 add 2 page R/B# Notes: 1. The OTP page must be within the range 02h–0Bh ...

Page 51

... Programmable I/O drive strength Programmable R/B# pull-down strength Reserved t FEAT) while the subfeature parameters are being loaded from the www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 51 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 52

... I/O3 Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) www.DataSheet.net/ I/O7 I/O6 I/O5 I/O4 I/O3 Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Micron Technology, Inc., reserves the right to change products or specifications without notice. 52 Command Definitions I/O2 I/O1 I/O0 Value Notes 00h 01h 02h 03h ...

Page 53

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory I/O6 I/O5 I/O4 I/O3 Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) Reserved (0) www.DataSheet.net cycle t FEAT Micron Technology, Inc., reserves the right to change products or specifications without notice. 53 Command Definitions I/O2 I/O1 I/O0 Value Notes 0 0 00h 01h 1 0 02h 1 1 ...

Page 54

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory t ADL www.DataSheet.net/ Feature address, 1 cycle Micron Technology, Inc., reserves the right to change products or specifications without notice. 54 Command Definitions t FEAT while FEAT ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 55

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 55 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 56

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 56 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 57

Figure 34: TWO-PLANE PAGE READ CLE WE# ALE RE# Page address M Column Column Row I/Ox 00h add 1 add 2 add 1 Column address J Plane 0 address R/B# CLE WE# ALE RE# I/ ...

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Figure 35: TWO-PLANE PAGE READ with RANDOM DATA READ R/B# RE# I/Ox 00h Address (5 cycles) 00h Address (5 cycles) Plane 0 address Plane 1 address R/B# RE# I/Ox 06h Address (5 cycles) E0h Plane 1 address ...

Page 59

... NAND Flash Memory t DBSY, then returns HIGH. www.DataSheet.net/ t PROG are READ STATUS (70h, 78h) and RESET (FFh). Micron Technology, Inc., reserves the right to change products or specifications without notice. 59 Command Definitions t DBSY are READ STATUS (70h ©2005 Micron Technology, Inc. All rights reserved. ...

Page 60

... Different column address than previous 5 address cycles, for 1st plane only Repeat as many times as necessary www.DataSheet.net/ t PROG input 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 60 Command Definitions t PROG Data input 10h 70h 1 Status t DBSY ...

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... DBSY are READ STATUS (70h and 78h) and RESET t CBSY) is determined by the actual programming time of www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 61 Command Definitions t CBSY duration is the time it takes ©2005 Micron Technology, Inc. All rights reserved. ...

Page 62

... DBSY 11h 80h Address/data input 2nd plane t DBSY 11h 80h Address/data input www.DataSheet.net/ 2nd plane Micron Technology, Inc., reserves the right to change products or specifications without notice. 62 Command Definitions t CBSY 15h 1 t CBSY 15h 2 t LPROG 10h t R while two pages are read into © ...

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... NAND Flash Memory www.DataSheet.net/ t DBSY are READ STATUS (70h and 78h) and RESET t PROG are READ STATUS (70h and 78h) commands and Micron Technology, Inc., reserves the right to change products or specifications without notice. 63 Command Definitions t DBSY, t PROG. When program- © ...

Page 64

... R 35h 85h Address (5 cycles) 1st-plane destination 85h 10h Address (2 cycles) Data Unlimited number of repetitions Micron Technology, Inc., reserves the right to change products or specifications without notice. 64 Command Definitions t DBSY Address (5 cycles) 11h 1st-plane destination 85h Data Address (2 cycles) Data Data ...

Page 65

... PROG 85h 10h Address (2 cycles) Data Unlimited number of repetitions www.DataSheet.net/ t BERS are READ STATUS (70h, 78h) commands and Micron Technology, Inc., reserves the right to change products or specifications without notice. 65 Command Definitions 85h 11h Data Address (2 cycles) Data Data Unlimited number of repetitions ...

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Figure 42: TWO-PLANE BLOCK ERASE Operation CLE CE# WE# ALE R/B# RE# I/Ox 60h Address input (3 cycles) D1h 1st plane Notes: 1. Command can be 70h or 78h. t DBSY 60h Address input (3 cycles) 2nd plane Optional t ...

Page 67

... TWO-PLANE/MULTIPLE-DIE READ STATUS 78h In Micron NAND Flash devices that have two planes and possibly more than one die in a package that share the same CE# pin possible to independently poll the status regis- ter of a particular plane and die using the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command ...

Page 68

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 68 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

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Figure 44: Interleaved PAGE READ with Status Register Monitoring I/Ox 00h Address 30h 00h Address Die 1 Die 2 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) 30h 78h Address Status 00h Data Out Die 1 Die 1 ...

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... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 70 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 71

... Die 1, Plane 0 Die 1, Plane 1 www.DataSheet.net/ Data output 06h Address E0h Data output Die 2, Plane 0 Die 2, Plane 1 Die 2, Plane 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 71 Command Definitions 78h Address Status Die 1 Data output 78h Address Status Die 1, Plane 1 ...

Page 72

... Address Data 10h Address Die 2 Die 1 www.DataSheet.net/ Address Data 15h 78h Address Die 2 Die 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 72 Command Definitions Status 80h Address Data 10h Die 1 Status 80h Address Data 15h Die 1 ©2005 Micron Technology, Inc. All rights reserved. ...

Page 73

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 73 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 74

Figure 48: Interleaved TWO-PLANE PROGRAM PAGE with Status Register Monitoring I/Ox 80h Address Data 11h 80h Die 1 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) I/Ox 78h Address Status 80h Address Die 1 Die 1 R/B# (die ...

Page 75

Figure 49: Interleaved TWO-PLANE PROGRAM PAGE CACHE MODE with Status Register Monitoring I/Ox 80h Address Data 11h 80h Die 1 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) I/Ox 78h 80h Address Status Address Die 1 Die 1 ...

Page 76

Figure 50: Interleaved READ for INTERNAL DATA MOVE with Status Register Monitoring I/Ox 00h Address 35h 00h Address Die 1 Die 2 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) 35h 78h Address Status 00h Data Out Die ...

Page 77

... Die 1, Plane 0 Die 1, Plane 1 www.DataSheet.net/ Data output 06h Address E0h Data output Die 2, Plane 0 Die 2, Plane 1 Die 2, Plane 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 77 Command Definitions 78h Address Status Die 1 Data output 78h Address Status Die 1, Plane 1 ...

Page 78

... NAND Flash Memory 78h Address Data 10h Address Die 2 Die 1 www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 78 Command Definitions Status 78h Address Status Die 2 ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 79

Figure 53: Interleaved TWO-PLANE PROGRAM for INTERNAL DATA MOVE with Status Register Monitoring Note 1 I/Ox 85h Address Data 11h Die 1 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) Note 1 I/Ox 78h Address Status 85h Address ...

Page 80

... NAND Flash Memory Address D0h 78h Address Status Die 2 Die 1 www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 80 Command Definitions 60h Address D0h Die 1 ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 81

... Address D0h 60h Address Die 1 Die 2 (optional) 60h Address D1h 60h Address www.DataSheet.net/ Die 1 Die 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 81 Command Definitions D1h 60h Address D0h Die 2 1 D0h 78h Address Status Die 2 ©2005 Micron Technology, Inc. All rights reserved. ...

Page 82

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 82 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 83

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 83 Command Definitions Bit 2 Bit 1 Bit 0 Hex E0h 60h / ©2005 Micron Technology, Inc. All rights reserved ...

Page 84

... NAND Flash Memory t WW) required from WP# toggling until 60h D0h www.DataSheet.net 60h D0h Micron Technology, Inc., reserves the right to change products or specifications without notice. 84 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 85

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory t WW 80h 10h t WW 80h 10h www.DataSheet.net 85h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 85 Command Definitions ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 86

... WW 60h D1h 60h www.DataSheet.net 60h D1h 60h 11h 80h Micron Technology, Inc., reserves the right to change products or specifications without notice. 86 Command Definitions D0h D0h 10h or 15h ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 87

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory 11h 80h 11h 85h www.DataSheet.net/ 11h 85h Micron Technology, Inc., reserves the right to change products or specifications without notice. 87 Command Definitions 10h or 15h 10h 10h ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 88

... Description ) 3,996 VB 4,096 8-bit ECC per 539 bytes of data x8: byte 4,096 x8: 00h Micron Technology, Inc., reserves the right to change products or specifications without notice. 88 Error Management VB during the endurance life of the prod- Requirement ©2005 Micron Technology, Inc. All rights reserved. ) Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 89

... internally monitored. (The WP# signal permits additional hardware pro prior to execution of the first RESET com- ST Micron Technology, Inc., reserves the right to change products or specifications without notice. 89 Electrical Characteristics Min Max –0.6 +4.6 –0.6 +4.6 –65 +150 – 5 Typ Max 0 – ...

Page 90

... CS 100μs (MIN) FFh www.DataSheet.net/ 1ms (MAX) 10μs (MAX) 50μs Don’t Care (MAX) Micron Technology, Inc., reserves the right to change products or specifications without notice. 90 Electrical Characteristics 3V device: 2.5V Undefined ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 91

... I = 2.1mA 0.4V I (R/B and www.DataSheet.net/ Symbol Device N MT29F16G VB MT29F32G MT29F64G MT29F128G Micron Technology, Inc., reserves the right to change products or specifications without notice. 91 Electrical Characteristics Min Typ Max Unit – – – – – – – ...

Page 92

... ADL begins in the ADDRESS cycle, on the final rising edge of WE#, and ends Micron Technology, Inc., reserves the right to change products or specifications without notice. 92 Electrical Characteristics Max Unit Notes ...

Page 93

... RHZ t RLOH www.DataSheet.net/ t RST – – t WHR 60 t WB, even if R/B# is ready. Micron Technology, Inc., reserves the right to change products or specifications without notice. 93 Electrical Characteristics 1 Max Unit Notes – ns – – µs 50 µs – ...

Page 94

... D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory t t PROG (last page) + PROG (last - 1 page) - command load time (last page) - www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 94 Electrical Characteristics Typ Max Unit Notes – ...

Page 95

... ALH t DH Col Col Row add 1 add 2 add 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 95 Timing Diagrams Don’t Care Row Row add 2 add 3 Don’t Care Undefined ©2005 Micron Technology, Inc. All rights reserved. ...

Page 96

... www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 96 Timing Diagrams t CLH Final Don’t Care ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 97

... RC ≥ 30ns. www.DataSheet.net REH t REA t REA t RLOH D D OUT OUT t RC < 30ns. Micron Technology, Inc., reserves the right to change products or specifications without notice. 97 Timing Diagrams t CHZ t REA t COH t RHZ t RHOH D OUT Don’t Care t CHZ t COH t RHZ t RHOH ...

Page 98

... REA 70h www.DataSheet.net ALS t ALH t WHR Row add 1 Row add 2 Row add 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. 98 Timing Diagrams t CHZ t COH t RHZ t RHOH Status output Don’t Care t CEA t CHZ t AR ...

Page 99

... Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Row Row Row 30h add 1 add 2 add 3 Busy www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 99 Timing Diagrams t CLR RHZ OUT ...

Page 100

... Row D D OUT OUT 30h 05h add Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. 100 Timing Diagrams Data output Don’t Care t CLR t CCS t REA Col Col D D OUT OUT E0h ...

Page 101

Figure 80: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row I/Ox 00h add 1 add 2 ...

Page 102

Figure 81: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE# WE# t CEA ALE REA ...

Page 103

Figure 82: PAGE READ CACHE MODE Operation Without R/B#, Part CLE t t CLS CLH CE WE# ALE RE Col Col Row Row Row I/Ox 00h add ...

Page 104

Figure 83: PAGE READ CACHE MODE Operation Without R/B#, Part CLE t CLS t CLH t CS CE# WE# t RHW ALE REA I/Ox OUT OUT D ...

Page 105

... Row add 1 add 2 add Byte serial Input x8 device 4,314 bytes Micron Technology, Inc., reserves the right to change products or specifications without notice. 105 Timing Diagrams Byte 3 Byte PROG t WHR 10h 70h Status PROGRAM READ STATUS ...

Page 106

... D D Col Col 85h N N+1 add 1 add 2 RANDOM DATA Column address Serial input INPUT command Micron Technology, Inc., reserves the right to change products or specifications without notice. 106 Timing Diagrams Data input Don’t Care PROG t WHR 10h 70h N N+1 PROGRAM ...

Page 107

... WB t CBSY D Col Col Row Row IN 15h 80h M add 1 add 2 add 1 add 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. 107 Timing Diagrams PROG t WHR Data Data Status 10h 70h 1 N READ STATUS Busy command Don’t Care ...

Page 108

Figure 90: PROGRAM PAGE CACHE MODE Operation Ending on 15h CLE CE ADL WE# ALE RE# Col Col Row Row Row 80h add 1 add 2 add 1 add 2 add 3 ...

Page 109

... BERS Row D0h ERASE READ STATUS command command Busy www.DataSheet.net/ t RST Micron Technology, Inc., reserves the right to change products or specifications without notice. 109 Timing Diagrams t WHR Status 70h I/ Pass I/ Fail Don’t Care ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

Page 110

... TYP for reference only 48 25 www.DataSheet.net/ See detail A 1.20 MAX Micron Technology, Inc., reserves the right to change products or specifications without notice. 110 Package Information Mold compound: Epoxy novolac Plated lead finish: 100% Sn Package width and length do not include mold protrusion ...

Page 111

... TYP 6.00 6.00 ±0.05 Notes: 1. All dimensions are in millimeters. 2. Pads are plated with 5-16 microns of nickel followed by a minimum of 0.50 microns of soft wire bondable gold (99.9% pure). 3. All dimensions are in millimeters. PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory 6 ...

Page 112

... TYP 6.00 6.00 ±0.05 Notes: 1. All dimensions are in millimeters. 2. Pads are plated with 5-16 microns of nickel followed by a minimum of 0.50 microns of soft wire bondable gold (99.9% pure). 3. All dimensions are in millimeters. PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory 6 ...

Page 113

... Notes: 1. All dimensions are in millimeters. 2. Pads are nonsolder-mask defined (NSMD) and are plated with 3–15 microns of nickel fol- lowed by a minimum of 0.1 microns of soft wire bondable gold (99.99% pure). 3. Primary datum A (seating plane) is defined by the bottom terminal surface. Metallized test terminal lands or interconnect terminals need not extend below the package bottom surface ...

Page 114

... Figure 9: Array Organization for 64Gb and 128Gb x8 on page 16: In note 1, changed all BA7 references tro BA6 • Table 10, Parameter Page Data Structure, on page 29: Added “Micron” to device man- ufacturer description; updated values column for bytes 129-130, 131–132, 254–255 (for all part numbers). • ...

Page 115

... PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__3.fm -Rev. D 5/08 EN Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory www.DataSheet.net/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 115 Revision History ©2005 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.co.kr/ ...

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