MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 67

no-image

MT29F128G08WAAC6

Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
TWO-PLANE/MULTIPLE-DIE READ STATUS 78h
Figure 43:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
TWO-PLANE/MULTIPLE-DIE READ STATUS Cycle
In Micron NAND Flash devices that have two planes and possibly more than one die in a
package that share the same CE# pin, it is possible to independently poll the status regis-
ter of a particular plane and die using the TWO-PLANE/MULTIPLE-DIE READ STATUS
(78h) command. This feature operates regardless of device size, organization, or status.
This command can be used to check the status during and after two-plane operations
and also to check the status of interleaved die operations.
After the 78h command is issued, the device requires 3 ADDRESS cycles containing the
block and page addresses, BA[19:7] and PA[6:0]. The most significant block address bit in
the third ADDRESS cycle, BA19, selects the proper die, and the least significant block
address bit in the first ADDRESS cycle, BA7, selects the proper plane within that die.
After the 78h command and the 3 ADDRESS cycles, the status register is output on
I/O[7:0] when RE# is LOW. Changes in the status register will be seen on I/O[7:0] as long
as CE# and RE# are LOW; it is not necessary to issue a new TWO-PLANE/MULTIPLE-DIE
READ STATUS command to see these changes. The status register bit definitions are
identical to those reported by the READ STATUS command (see Table 11 on page 34).
In devices that have more than one die sharing a common CE# pin, when one die is not
busy (status register bit 5 is “1”), it is possible to initiate a new operation to that die even
if the other die is busy. See “Interleaved Die Operations” on page 68.
Use of the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command is prohibited
during and following power-on RESET and OTP commands.
WE#
I/Ox
CE#
CLE
ALE
RE#
Micron Confidential and Proprietary
78h
67
www.DataSheet.net/
Address (3 cycles)
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WHR
Command Definitions
t AR
©2005 Micron Technology, Inc. All rights reserved.
t REA
Status output
Datasheet pdf - http://www.DataSheet4U.co.kr/

Related parts for MT29F128G08WAAC6