MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 25

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

RANDOM DATA READ 05h-E0h
Figure 16:
READ ID 90h
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
R/B#
RE#
I/Ox
00h
RANDOM DATA READ Operation
(5 cycles)
Address
30h
The RANDOM DATA READ command enables the user to specify a new column address
so the data at single or multiple addresses can be read. The random read mode is
enabled after a normal PAGE READ (00h-30h sequence).
Random data can be output after the initial page read by writing an 05h-E0h command
sequence along with the new column address (2 cycles).
The RANDOM DATA READ command can be issued without limit within the page.
Only data on the current page can be read. Pulsing the RE# pin outputs data sequentially
(see Figure 16).
The RANDOM DATA READ command changes the column address of the die last
addressed.
The READ ID command is used to read the 5 bytes of identifier codes programmed into
the devices. The READ ID command reads a 5-byte table that includes manufacturer’s
ID, device configuration, and part-specific information. See Table 9 on page 28, which
shows complete listings of all configuration details.
Writing 90h to the command register puts the device into the read ID mode. The com-
mand register stays in this mode until another valid command is issued (see Figure 17).
t R
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Data output
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16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
05h
(2 cycles)
Address
E0h
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.
Data output
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