MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 24

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

READ Operations
PAGE READ 00h-30h
Figure 15:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
00h
PAGE READ Operation
To read a page from the NAND Flash array, write the 00h command to the command reg-
ister, then write 5 ADDRESS cycles, and conclude with the 30h command.
To determine the progress of the data transfer from the NAND Flash array to the data
register (
mand. If the READ STATUS command is used to monitor the data transfer, the user must
re-issue the READ (00h) command to receive data output from the data register. See
Figure 82 on page 103 and Figure 83 on page 104 for examples. After the READ com-
mand has been re-issued, pulsing the RE# line will result in outputting data, starting
from the initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address and going to the
end of the page, read the data by repeatedly pulsing RE# at up to the maximum
(see Figure 15).
For improved READ operation performance use PAGE READ CACHE MODE operations
(see pages 35 through 37).
Address (5 cycles)
t
R), monitor the R/B# signal; or alternately, issue a READ STATUS (70h) com-
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30h
t WB
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t R
Command Definitions
Data output (Serial access)
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
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RC rate
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