MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 40

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Figure 23:
Internal Data Move
READ FOR INTERNAL DATA MOVE 00h-35h
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
R/B#
R/B#
I/Ox
I/Ox
80h
80h
data input
data input
Address &
Address &
PROGRAM PAGE CACHE MODE Example
Notes: 1. Command can be 70h or 78h. Check I/O[6:5] for internal ready/busy. Check I/O[1:0] for pass
15h
15h
An internal data move requires two command sequences. Issue a READ for INTERNAL
DATA MOVE (00h-35h) command first, then the PROGRAM for INTERNAL DATA MOVE
(85h-10h) command. Data moves are only supported within the plane from which data
is read.
The READ for INTERNAL DATA MOVE (00h-35h) command is used in conjunction with
the PROGRAM for INTERNAL DATA MOVE (85h-10h) command. First, 00h is written to
the command register, then the internal source address is written (5 cycles). After the
address is input, the READ for INTERNAL DATA MOVE (35h) command writes to the
command register. This transfers a page from memory into the cache register.
All 5 ADDRESS cycles are required when a READ for INTERNAL DATA MOVE command
is issued.
After a READ for INTERNAL DATA MOVE (00h-35h) command is issued and R/B#
returns HIGH, signifying operation completion, the data transferred from the source
page into the cache register may be read out by toggling RE#. Data is output sequentially
from the column address originally specified with the READ FOR INTERNAL DATA
MOVE (00h-35h) command. RANDOM DATA READ (05h-E0h) commands can be issued
without limit after the READ FOR INTERNAL DATA MOVE command.
The memory device is now ready to accept the PROGRAM for INTERNAL DATA MOVE
command. Refer to the description of this command in the following section.
t CBSY
fail. RE# can stay LOW or pulse multiple times after a 70h or 78h command.
t CBSY
70h
80h
output
Status
data input
Address &
Micron Confidential and Proprietary
2
80h
A: Without status reads
B: With status reads
15h
data input
Address &
t CBSY
40
80h
www.DataSheet.net/
10h
data input
Address &
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t PROG
70h
15h
output
Status
t CBSY
2
80h
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.
data input
Address &
10h
t LPROG
1
Datasheet pdf - http://www.DataSheet4U.co.kr/