MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 38

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

PROGRAM Operations
PROGRAM PAGE 80h-10h
SERIAL DATA INPUT 80h
RANDOM DATA INPUT 85h
Figure 21:
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16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
PROGRAM and READ STATUS Operation
Notes: 1. Command can be 70h or 78h.
Micron NAND Flash devices are inherently page-programmed devices. Pages must be
programmed consecutively within a block, the from the least significant page address to
the most significant page address (that is, 0, 1, 2, …127). Random page address program-
ming is prohibited.
These Micron MLC NAND Flash devices do not support partial-page programming
operations.
If a RESET (FFh) command is issued during a PROGRAM PAGE operation while R/B# is
LOW, the data in the shared-memory cells being programmed could become invalid.
Interrupting a PROGRAM operation on one page could corrupt the data in another page
within the block being programmed.
PROGRAM PAGE operations require loading the SERIAL DATA INPUT (80h) command
into the command register, followed by 5 ADDRESS cycles, then the data. Serial data is
loaded on consecutive WE# cycles starting at the given address. The PROGRAM (10h)
command is written after the data input is complete. The control logic automatically
executes the proper algorithm and controls all the necessary timing to program and ver-
ify the operation. Write verification only detects “1s” that are not successfully written
to “0s.”
R/B# goes LOW for the duration of array programming time,
(70h or 78h) command and the RESET (FFh) command are the only commands valid dur-
ing the programming operation.
Bit 6 of the status register will reflect the state of R/B#. When the device reaches ready,
read bit 0 of the status register to determine if the program operation passed or failed
(see Figure 21). The command register stays in read status register mode until another
valid command is written to it.
After the initial data set is input, additional data can be written to a new column address
with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT com-
mand can be used any number of times in the same page prior to issuing the PAGE
WRITE (10h) command. See Figure 22 on page 39 for the proper command sequence.
R/B#
I/Ox
80h
Address (5 cycles)
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10h
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t PROG
70h
1
Command Definitions
t
PROG. The READ STATUS
I/O 0 = 0 PROGRAM successful
I/O 0 = 1 PROGRAM error
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