MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 68

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Interleaved Die Operations
Interleaved PAGE READ Operations
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16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
In devices that have more than one die sharing a common CE# pin, it is possible to sig-
nificantly improve performance by interleaving operations between the die. When both
die are idle (R/B# is HIGH or status register bit 5 is “1”), issue a command to the first die.
Then, while the first die is busy (R/B# is LOW), issue a command to the other die.
There are two methods to determine operation completion. The R/B# signal indicates
when both die have finished their operations. R/B# remains LOW while either die is
busy. When R/B# goes HIGH, then both die are idle and the operations are complete.
Alternatively, the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command can
report the status of each die individually. If a die is performing a cache operation, like
PROGRAM PAGE CACHE MODE (80h-15h) or TWO-PLANE PROGRAM PAGE CACHE
MODE (80h-11h-80h-15h), then the die is able to accept the data for another cache
operation when status register bit 6 is “1.” All operations, including cache operations, are
complete on a die when status register bit 5 is “1.”
During and following interleaved die operations, the READ STATUS (70h) command is
prohibited. Instead, use the 78h command to monitor status. These commands select
which die will report status. Interleaved two-plane commands must also meet the
requirements in “Two-Plane Addressing” on page 55.
PAGE READ, TWO-PLANE PAGE READ, PROGRAM PAGE, PROGRAM PAGE CACHE
MODE, TWO-PLANE PROGRAM PAGE, TWO-PLANE PROGRAM PAGE CACHE MODE,
READ for INTERNAL DATA MOVE, TWO-PLANE READ for INTERNAL DATA MOVE,
PROGRAM for INTERNAL DATA MOVE, TWO-PLANE PROGRAM for INTERNAL DATA
MOVE, BLOCK ERASE, and TWO-PLANE BLOCK ERASE can be used in any combination
as interleaved operations on separate die that share a common CE#.
In interleaved PROGRAM and READ operations, the PROGRAM operation must be
issued before the READ operation. The data from the READ operation must be read out
before the next PROGRAM operation.
Figure 44 on page 69 shows how to perform interleaved PAGE READ operations. In
Figure 44, the status register is monitored for operation completion with the TWO-
PLANE/MULTIPLE DIE READ STATUS (78h) command.
During interleaved PAGE READ operations, a TWO-PLANE/MULTIPLE-DIE READ STA-
TUS (78h) command is required before reading data from either die. This ensures that
only the die selected by the 78h command responds to a subsequent toggle of the RE#
signal after data output is selected with the 00h command.
RANDOM DATA OUTPUT (05h-E0h) commands are permitted during interleaved PAGE
READ operations.
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16, 32, 64, 128Gb NAND Flash Memory
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Command Definitions
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